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Condensed Matter > Materials Science

arXiv:1611.04456 (cond-mat)
[Submitted on 9 Nov 2016]

Title:TiO$_2$-based Memristors and ReRAM: Materials, Mechanisms and Models (a Review)

Authors:Ella Gale
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Abstract:The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall summarise the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilised and archetypal material for both. We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor scientists can learn from each other and examine the outlook for these technologies.
Comments: Review, 29 pages, 2 figures, journal
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Emerging Technologies (cs.ET)
MSC classes: 68Mxx, 92Exx, 92Fxx, 94Cxx
ACM classes: B.3.1; B.6.1; C.1.3
Cite as: arXiv:1611.04456 [cond-mat.mtrl-sci]
  (or arXiv:1611.04456v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1611.04456
Journal reference: Semiconductor Science and Technology, Volume 29, Number 10, 104004, (2014)

Submission history

From: Ella Gale [view email]
[v1] Wed, 9 Nov 2016 14:00:13 UTC (86 KB)
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