When an organic semiconductor (OSC) is blended with an electron acceptor molecule that can act as a p-type dopant, there should ideally be complete (integer) transfer of charge from the OSC to the dopant. However, some dopant-OSC blends instead form charge transfer complexes (CTCs), characterized by fractional charge transfer (CT) and strong orbital hybridization between the two molecules. Fractional CT doping does not efficiently generate free charge carriers, but it is unclear what conditions lead to incomplete charge transfer. Here we show that by modifying film processing conditions in the semiconductor-dopant couple poly(3-hexylthiophene):2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (P3HT:F4TCNQ), we can selectively obtain nearly pure integer or fractional CT phases. Fractional CT films show electrical conductivities approximately 2 orders of magnitude lower than corresponding integer CT films, and remarkably different optical absorption spectra. Grazing incidence wide-angle X-ray diffraction (GIXD) reveals that fractional CT films display an unusually dense and well-ordered crystal structure. These films show lower paracrystallinity and shorter lamellar and π-stacking distances than undoped films processed under similar conditions. Using plane-wave DFT we obtain a structure with unit cell parameters closely matching those observed by GIXD. This first-ever observation of both fractional and integer CT in a single OSC-dopant system demonstrates the importance of structural effects on OSC doping and opens the door to further studies.

Recent development of dopant induced solubility control (DISC) patterning of polymer semiconductors has enabled direct-write optical patterning of poly-3-hexylthiophene (P3HT) with diffraction limited resolution. Here, the optical DISC patterning technique to the most simple circuit element, a wire, is applied. Optical patterning of P3HT and P3HT doped with the molecular dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) wires with dimensions of 20–70 nm thickness, 200–900 nm width, and 40 μm length is demonstrated. In addition, optical patterning of wire patterns like “L” bends and “T” junctions without changing the diameter or thickness of the wires at the junctions is demonstrated. The wires themselves show up to 0.034 S cm-1 conductance when sequentially doped. It is also demonstrated that a P3HT nanowire can be doped, de-doped, and re-doped from solution without changing the dimension of the wire. The combined abilities to optically pattern and reversibly dope a polymer semiconductor represents a full suite of patterning steps equivalent to photolithography for inorganic semiconductors.

Many organic electronic devices require vertically layered structures to operate. This manuscript demonstrates an additive solution process for depositing multiple layers of semiconducting polymer (SP) films by controlling film solubility with molecular dopants. During multi-layer deposition the bottom layers are exposed to a series of solvent environments that swell the SP films. We use neutron reflectometry (NR) to quantify the film thickness change and solvent content during solvent exposure in a single poly-3-hexylthiophene (P3HT) layer. The film thickness increases by 40-80% with exposure to good solvents. Four layer thin-films composed of alternating protonated and deuterated P3HT layers were additively coated from solution. NR measurements reveal high individual layer purity and that extensive solvent soaking induces no mixing between layers. Finally, two-point conductivity measurements demonstrate that P3HT:P3HT layer interfaces have no effect on vertical conductivity. This facile process enables additive layering of mutually soluble SP films and can be used to design novel electronic device architectures.