Shallow acceptors

In an extrinsic semiconductor, tlie conductivity is dominated by tlie e (or h ) in tlie CB (or VB) provided by shallow donors (or acceptors). If tlie dominant charge carriers are negative (electrons), tlie material is called n type. If tlie conduction is dominated by holes (positive charge carriers), tlie material is called p type. [Pg.2877]

Diamond may never be used to make devices because it is nearly impossible to make it sufficiently n type, tliat is to obtain high electron concentration. Substitutional B is a good shallow acceptor, and interstitial Li has been reported to produce some n type conductivity. [Pg.2878]

Silicon is used in many fonns, from high-purity tliin films to bulk material, which may be crystalline, multi- or poly crystalline and amorjDhous (usually hydrogenated). Silicon is the material discussed tire most in tliis article. Substitutional B and P are tire most common (of many) shallow acceptors and donors, respectively. [Pg.2878]

All teclmologically important properties of semiconductors are detennined by defect-associated energy levels in the gap. The conductivity of pure semiconductors varies as g expf-A CgT), where is the gap. In most semiconductors with practical applications, the size of the gap, E 1-2 eV, makes the thennal excitation of electrons across the gap a relatively unimportant process. The introduction of shallow states into the gap through doping, with either donors or acceptors, allows for large changes in conductivity (figure C2.16.1). The donor and acceptor levels are typically a few meV below the CB and a few tens of meV above the VB, respectively. The depth of these levels usually scales with the size of the gap (see below). [Pg.2882]

Shallow impurities have energy levels in the gap but very close to a band. If an impurity has an empty level close to the VB maximum, an electron can be thennally promoted from the VB into this level, leaving a hole in the VB. Such an impurity is a shallow acceptor. On the other hand, if an impurity has an occupied level very close to the CB minimum, the electron in that level can be thennally promoted into the CB where it participates in the conductivity. Such an impurity is a shallow donor. [Pg.2886]

Shallow donors (or acceptors) add new electrons to tire CB (or new holes to tire VB), resulting in a net increase in tire number of a particular type of charge carrier. The implantation of shallow donors or acceptors is perfonned for tliis purjDose. But tliis process can also occur unintentionally. For example, tire precipitation around 450°C of interstitial oxygen in Si generates a series of shallow double donors called tliennal donors. As-grown GaN crystal are always heavily n type, because of some intrinsic shallow-level defect. The presence and type of new charge carriers can be detected by Flail effect measurements. [Pg.2887]

Fig. 1. Band-edge energy diagram where the energy of electrons is higher in the conduction band than in the valence band (a) an undoped semiconductor having a thermally excited carrier (b) n-ty e doped semiconductor having shallow donors and (c) a -type doped semiconductor having shallow acceptors.

The impurity atoms used to form the p—n junction form well-defined energy levels within the band gap. These levels are shallow in the sense that the donor levels He close to the conduction band (Fig. lb) and the acceptor levels are close to the valence band (Fig. Ic). The thermal energy at room temperature is large enough for most of the dopant atoms contributing to the impurity levels to become ionized. Thus, in the -type region, some electrons in the valence band have sufficient thermal energy to be excited into the acceptor level and leave mobile holes in the valence band. Similar excitation occurs for electrons from the donor to conduction bands of the n-ty e material. The electrons in the conduction band of the n-ty e semiconductor and the holes in the valence band of the -type semiconductor are called majority carriers. Likewise, holes in the -type, and electrons in the -type semiconductor are called minority carriers. [Pg.126]

Fig. 2. Representation of the band edges in a semiconductor p—n junction where shallow donor, acceptor energies, and the Fermi level are labeled Ejy E, and E respectively, (a) Without external bias is the built-in potential of the p—n junction (b) under an appHed forward voltage F. ...

In conclusion, one important factor that contributes to the strong affinity of TBP proteins to TATA boxes is the large hydrophobic interaction area between them. Major distortions of the B-DNA structure cause the DNA to present a wide and shallow minor groove surface that is sterically complementary to the underside of the saddle structure of the TBP protein. The complementarity of these surfaces, and in addition the six specific hydrogen bonds between four side chains from TBP and four hydrogen bond acceptors from bases in the minor groove, are the main factors responsible for causing TBP to bind to TATA boxes 100,000-fold more readily than to a random DNA sequence. [Pg.158]

Equations (50) and (51) show that for 0 < 6 < 1 the potential well for the electron near the donor site is more shallow than that in the initial equilibrium configuration. This leads to the fact that the radius of the electron density distribution in the transitional configuration is greater than in the initial equilibrium one (Fig. 3). A similar situation exists for the electron density distribution near the acceptor site. This leads to an increased transmission coefficient as compared to that calculated in the approximation of constant electron density (ACED). [Pg.113]

The passivation of n-type dopants in Si was reported by Johnson et al. (1986) several years after it was well recognized that deep defects and shallow acceptors were passivated following exposure to an H2 plasma. Donor passivation effects had been missed by previous workers presumably because the in-diffusion of H into heavily n-doped Si is impeded when compared to undoped or p-type material. [Pg.166]

This chapter is devoted to the energetics and kinetics of the incorporation of hydrogen into the simplest and most studied of its possible hosts, crystalline silicon of high perfection containing known concentrations of shallow donor or acceptor impurities. It undertakes to review what has been learned from experiments about the phenomenological parameters... [Pg.240]

Awareness of the very rapid migration of the H+ species provides a valuable orientation for the interpretation of many experiments. One of the most important of the examples discussed in the later parts of Section 3 has to do with the binding energy of the complexes AH that hydrogen forms with various shallow acceptors A. The lifetime of such a complex with respect to thermal dissociation into H+ and A can be measured in some types of annealing experiments, and this lifetime is related to the... [Pg.244]

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