Sputtering processes

To examine the soUd as it approaches equUibrium (atom energies of 0.025 eV) requires molecular dynamic simulations. Molecular dynamic (MD) simulations foUow the spatial and temporal evolution of atoms in a cascade as the atoms regain thermal equiUbrium in about 10 ps. By use of MD, one can foUow the physical and chemical effects that induence the final cascade state. Molecular dynamics have been used to study a variety of cascade phenomena. These include defect evolution, recombination dynamics, Hquid-like core effects, and final defect states. MD programs have also been used to model sputtering processes. [Pg.397]

In the sputtering process, each surface atomic layer is removed consecutively. If there is no diffusion in the target, the composition of the vapor flux leaving the surface is the same as the composition of the bulk of the material being sputtered, even though the composition of the surface may be different from the bulk. This allows the sputter deposition of alloy compositions, which can not be thermally vaporized as the alloy because of the greatly differing vapor pressures of the alloy constituents. [Pg.518]

Alternative Thin-Film Fabrication Approaches. Thin films of electronic ceramic materials have also been prepared by sputtering, electron beam evaporation, laser ablation, chemical beam deposition, and chemical vapor deposition (CVD). In the sputtering process, targets may be metal... [Pg.346]

The most common application of dynamic SIMS is depth profiling elemental dopants and contaminants in materials at trace levels in areas as small as 10 pm in diameter. SIMS provides little or no chemical or molecular information because of the violent sputtering process. SIMS provides a measurement of the elemental impurity as a function of depth with detection limits in the ppm—ppt range. Quantification requires the use of standards and is complicated by changes in the chemistry of the sample in surface and interface regions (matrix efiects). Therefore, SIMS is almost never used to quantitadvely analyze materials for which standards have not been carefiilly prepared. The depth resoludon of SIMS is typically between 20 A and 300 A, and depends upon the analytical conditions and the sample type. SIMS is also used to measure bulk impurities (no depth resoludon) in a variety of materials with detection limits in the ppb-ppt range. [Pg.528]

The detection limit of each element depends upon the electron affinity or ionization potential of the element itself, the chemical nature of the sample in which it is contained, and the type and intensity of the primary ion beam used in the sputtering process. [Pg.535]

Because SIMS can measure only ions created in the sputtering process and not neutral atoms or clusters, the detection limit of a particular element is affected by how efficiently it ionizes. The ionization efficiency of an element is referred to as its ion yield. The ion yield of a particular element A is simply the ratio of the number of A ions to the total number of A atoms sputtered from the mixing zone. For example, if element A has a 1 100 probability of being ionized in the sputtering process—that is, if 1 ion is formed from every 100 atoms of A sputtered from the sample—the ion yield of A would be 1/100. The higher the ion yield for a given element, the lower (better) the detection limit. [Pg.535]

The sputtering process is frequendy used in both the processing (e.g., ion etching) and characterization of materials. Many materials develop nonuniformities, such as cones and ridges, under ion bombardment. Polycrystalline materials, in particular, have grains and grain boundaries that can sputter at different rates. Impurities can also influence the formation of surface topography. ... [Pg.704]

If a sample of polycrystalline material is rotated during the sputtering process, the individual grains will be sputtered from multiple directions and nonuniform removal of material can be prevented. This technique has been successfully used in AES analysis to characterize several materials, including metal films. Figure 9 indicates the improvement in depth resolution obtained in an AES profile of five cycles of nickel and chromium layers on silicon. Each layer is about 50 nm thick, except for a thinner nickel layer at the surface, and the total structure thickness is about 0.5 pm. There can be a problem if the surface is rough and the analysis area is small (less than 0.1-pm diameter), as is typical for AES. In this case the area of interest can rotate on and off of a specific feature and the profile will be jagged. [Pg.708]

The near-surface region is partially oxidized during OJ bombardment. During the sputter process the chemical bonding of the oxides is broken. Because the binding... [Pg.111]

For the analysis of surfaces there are a group of ion bombardment techniques based on sputtering processes described in Ref 30 Since the spectra obtained consists mainly of adsorbed gases and radicals, these techniques are omitted from this discussion... [Pg.46]

Both positive and negative ions are produced during the sputtering process, and either can be recorded by an appropriate choice of instrumental parameters. Positive ions are the result of protonation, [M + H]", or cationiz-ation, [M +cation], whereas negative ions are preponderantly [M-H], but can also be formed by the addition of an anion, that is, [M+anion]". The type of pseudomolecular ion produced is governed by the chemical nature of the sample and by the composition of the matrix from which it is ionized. [Pg.25]

Modem trace analysis is interested in detailed information about the distribution of elements in microareas and their chemical binding forms (specia-tion). The limited sample mass implies methods with absolute detection limits as high as possible. Use of the sputtering process as a sampling technique localises the analytical zone at the outer layers of a solid, and allows analysis to progress into the interior. [Pg.627]

The first successful attempts of electrochemical nanostructuring, pioneered by Penner et al. [69], involved the generation of surface defects by the tip at predetermined positions, which were created either by a mechanical contact between tip and substrate (tip crash) or by some sort of sputtering process, initiated by high-voltage... [Pg.135]

SIMS involves bombarding a material surface with a primary ion beam, with a typical energy in the keV range. Ion impacts on the surface induce a so-called collision cascade sputtering process, where the energy of the primary ions is transferred to the surface through nuclear collisions [Brunelle et al. 2005]. [Pg.434]

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