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ORCIDV. Ramgopal Rao
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2020 – today
- 2024
[c25]Sumit Saha, Prasad B. Kanyaka, Mark Lust, Nima Ghalichechian, V. Ramgopal Rao, Maryam Shojaei Baghini:
Heterogeneous CMOS-MEMS based Boost Converter for 2.4 GHz RF energy Harvester. VLSID 2024: 425-430- 2022
- [d1]Shubham Saxena
, Wasi Uddin, Sumit Sharma, Samaresh Das, V. Ramgopal Rao:
Gate voltage tunable temperature coefficient of resistance of WSe2 for thermal sensing applications. IEEE DataPort, 2022
- 2020
- [j10]Sivaneswaran Sankar, Mayank Goel, Po-Hung Chen, V. Ramgopal Rao, Maryam Shojaei Baghini:
Switched-Capacitor-Assisted Power Gating for Ultra-Low Standby Power in CMOS Digital ICs. IEEE Trans. Circuits Syst. 67-I(12): 4281-4294 (2020)
2010 – 2019
- 2018
- [c24]M. Hadi Said, Fares Tounsi, Brahim Mezghani, Aftab Ahmed, Shardul Pandit, Rajul Patkar, Pradeep Dixit, M. S. Baghin, V. Ramgopal Rao:
Induced Stress Enhancement Using U-shaped Arms in a 3-Axis Piezoresistive MEMS Accelerometer. SSD 2018: 1481-1486 - [c23]Rajul Patkar, Mamta Ashwin, Madhuri Vinchurkar, Andrea Adami, Flavio Giacomozzi, Leandro Lorenzelli, Maryam Shojaei Baghini, V. Ramgopal Rao:
Microcantilever Based Dual Mode Optical Biosensor for Agricultural Pathogen Detection. IEEE SENSORS 2018: 1-3 - 2017
- [c22]Tejas R. Naik, M. Ravikanth, V. Ramgopal Rao:
Vapor phase self-assembly of metal-porphyrins for controllable work function tuning. NEMS 2017: 832-835 - [i1]Sivaneswaran Sankar, Maryam Shojaei Baghini, Valipe Ramgopal Rao:
A Novel Method of Discrete-Time Amplification using NEMS Devices. CoRR abs/1702.05614 (2017) - 2016
- [j9]Neena A. Gilda, Hande Vinayak Gopal, Dinesh Kumar Sharma, V. Ramgopal Rao, Maryam Shojaei Baghini:
Low power, area efficient, and temperature-variation tolerant bidirectional current source for sensor applications. Microelectron. J. 49: 29-35 (2016) - [c21]Hala Ghadhab, Mohamed Hadj Said, Fares Tounsi, Brahim Mezghani, Sandeep Goud Surya, V. Ramgopal Rao:
Thikness dependence investigation of the mutual inductance link in concentric planar transformers. DTIS 2016: 1-5 - [c20]Valipe Ramgopal Rao, Sandeep Goud Surya:
Organic field effect transistors for explosive and radiation dosimetry applications. IEEE SENSORS 2016: 1-3 - [c19]Nikhilendu Tiwary, Arindam Kushagra, Manoj Kandpal, V. Ramgopal Rao:
Experimental and theoretical analyses of effect of ZnO nanowire growth on mechanical properties of microcantilevers for dynamic sensing applications. IEEE SENSORS 2016: 1-3 - [c18]Ankur Gupta, Mayank Shrivastava, Maryam Shojaei Baghini, Harald Gossner, V. Ramgopal Rao:
A Fully-Integrated Radio-Frequency Power Amplifier in 28nm CMOS Technology Mounted in BGA Package. VLSID 2016: 156-161 - 2015
- [c17]Fares Tounsi, Ezeddine Ayechi, Brahim Mezghani, Mohamed Masmoudi, Manoj Kandpal, V. Ramgopal Rao:
Behavior analysis of a 3-axis detection push-pull piezoresistive MEMS accelerometer. SSD 2015: 1-6 - 2012
- [j8]Sandeep Goud Surya, Sudip Nag, Nikhil M. Duragkar, Dilip Agarwal, Gaurav Chatterjee, Sahir Gandhi, Sheetal Patil, Dinesh Kumar Sharma, V. Ramgopal Rao:
A Low-Power Instrumentation System for Nano-Electro-Mechanical-Sensors for Environmental and Healthcare Applications. J. Low Power Electron. 8(3): 346-352 (2012) - [j7]Neena A. Gilda, Sudip Nag, Sheetal Patil, Maryam Shojaei Baghini, Dinesh Kumar Sharma, V. Ramgopal Rao:
Current Excitation Method for DeltaR Measurement in Piezo-Resistive Sensors With a 0.3-ppm Resolution. IEEE Trans. Instrum. Meas. 61(3): 767-774 (2012) - [c16]Angada B. Sachid, Pallavi Paliwal, S. Joshi, Maryam Shojaei Baghini, Dinesh Sharma, V. Ramgopal Rao:
Circuit Optimization at 22nm Technology Node. VLSI Design 2012: 322-327 - 2011
- [j6]Rajesh Amratlal Thakker, Mayank Srivastava, Ketankumar H. Tailor, Maryam Shojaei Baghini, Dinesh Kumar Sharma, V. Ramgopal Rao, Mahesh B. Patil:
A novel architecture for improving slew rate in FinFET-based op-amps and OTAs. Microelectron. J. 42(5): 758-765 (2011) - [c15]Neena A. Gilda, Sheetal Patil, V. Seena, Sanjay Joshi, Viral Thaker, Sanket Thakur, Amaravati Anvesha, Maryam Shojaei Baghini, Dinesh Kumar Sharma, V. Ramgopal Rao:
Piezoresistive 6-MNA coated microcantilevers with signal conditioning circuits for electronic nose. A-SSCC 2011: 121-124 - [c14]Sandeep Goud Surya, Sudip Nag, Avil J. Fernandes, Sahir Gandhi, Dilip Agarwal, Gaurav Chatterjee, V. Ramgopal Rao:
Highly Sensitive ?R/R Measurement System for Nano-electro-Mechanical Cantilever Based Bio-sensors. ISED 2011: 34-38 - [c13]Neena A. Gilda, Sandeep Goud Surya, Sanjay Joshi, Viral Thaker, Maryam Shojaei Baghini, Dinesh Kumar Sharma, V. Ramgopal Rao:
A low-cost, ultra sensitive hand-held system for explosive detection using piezo-resistive micro-cantilevers. ISOCC 2011: 325-328 - 2010
- [j5]Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Kazuo Tsutsui, Hiroshi Iwai:
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness. Microelectron. Reliab. 50(3): 332-337 (2010) - [c12]Prasenjit Ray, V. Ramgopal Rao, Prakash R. Apte:
A 8-resistor SU-8 accelerometer with reduced cross axis sensitivity. APCCAS 2010: 824-826 - [c11]Angada B. Sachid, Rajesh Amratlal Thakker, Chaitanya Sathe, Maryam Shojaei Baghini, Dinesh Kumar Sharma, V. Ramgopal Rao, Mahesh B. Patil:
Auto-BET-AMS: An automated device and circuit optimization platform to benchmark emerging technologies for performance and variability using an analog and mixed-signal design framework. ISQED 2010: 713-720
2000 – 2009
- 2009
- [j4]Rajesh Amratlal Thakker, Chaitanya Sathe, Angada B. Sachid, Maryam Shojaei Baghini, V. Ramgopal Rao, Mahesh B. Patil:
A Novel Table-Based Approach for Design of FinFET Circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 28(7): 1061-1070 (2009) - [c10]Rajesh Amratlal Thakker, Chaitanya Sathe, Angada B. Sachid, Maryam Shojaei Baghini, V. Ramgopal Rao, Mahesh B. Patil:
Automated design and optimization of circuits in emerging technologies. ASP-DAC 2009: 504-509 - 2007
- [j3]Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, Hiroshi Iwai:
Parasitic Effects in Multi-Gate MOSFETs. IEICE Trans. Electron. 90-C(10): 2051-2056 (2007) - 2006
- [c9]K. Narasimhulu, V. Ramgopal Rao:
Embedded Tutorial: Analog Circuit Performance Issues with Aggressively Scaled Gate Oxide CMOS Technologies. VLSI Design 2006: 45-50 - 2005
- [c8]D. Mukhopadhyay, P. K. Basu, V. Ramgopal Rao:
Physics and Technology: Towards Low-Power DSM Design. VLSI Design 2005: 16-17 - 2004
- [c7]K. Narasimhulu, Siva G. Narendra, V. Ramgopal Rao:
The Influence of Process Variations on the Halo MOSFETs and its Implications on the Analog Circuit performance. VLSI Design 2004: 545-550 - 2003
- [c6]Nihar R. Mohapatra, Madhav P. Desai, V. Ramgopal Rao:
Detailed Analysis of FIBL in MOS Transistors with High-K Gate Dielectrics. VLSI Design 2003: 99-104 - [c5]Najeeb-ud-Din Hakim, V. Ramgopal Rao, J. Vasi:
Small Signal Characteristics of Thin Film Single Halo SOI MOSFET for Mixed Mode Applications. VLSI Design 2003: 110-115 - [c4]D. Vinay Kumar, Nihar R. Mohapatra, Mahesh B. Patil, V. Ramgopal Rao:
Application of Look-up Table Approach to High-K Gate Dielectric MOS Transistor circuits. VLSI Design 2003: 128- - [c3]Abhisek Dixit, V. Ramgopal Rao:
A Novel Dynamic Threshold Operation Using Electrically Induced Junction MOSFET in the Deep Sub-micrometer CMOS Regime. VLSI Design 2003: 499-503 - 2001
- [j2]Nihar R. Mohapatra, Arijit Dutta, G. Sridhar, Madhav P. Desai, V. Ramgopal Rao:
Sub-100 nm CMOS circuit performance with high-K gate dielectrics. Microelectron. Reliab. 41(7): 1045-1048 (2001) - [j1]Aatish Kumar, S. Mahapatra, R. Lal, V. Ramgopal Rao:
Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETs. Microelectron. Reliab. 41(7): 1049-1051 (2001) - [c2]G. Shrivastav, S. Mahapatra, V. Ramgopal Rao, J. Vasi, K. G. Anil, C. Fink, Walter Hansch, I. Eisele:
erformance Optimization Of 60 Nm Channel Length Vertical Mosfets Using Channel Engineering. VLSI Design 2001: 475-478 - [c1]Nihar R. Mohapatra, Arijit Dutta, Madhav P. Desai, V. Ramgopal Rao:
Effect Of Fringing Capacitances In Sub 100 Nm Mosfet's With High-K Gate Dielectrics. VLSI Design 2001: 479-
Coauthor Index
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