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2020 – today
- 2024
[c5]IkJoon Choi, Seunghwan Hong, Kihyun Kim, Jeongsik Hwang, Seunghan Woo, Young-Sang Kim, Cheongryong Cho, Eun-Young Lee, Hun-Jae Lee, Min-Su Jung, Hee-Yun Jung, Ju-Seong Hwang, Junsub Yoon, Wonmook Lim, Hyeong-Jin Yoo, Won-Ki Lee, Jung-Kyun Oh, Dong-Su Lee, Jong-Eun Lee, Jun-Hyung Kim, Young-Kwan Kim, Su-Jin Park, Byung-Kyu Ho, Byongwook Na, Hye-In Choi, Chung-Ki Lee, Soo-Jung Lee, Hyunsung Shin, Young-Kyu Lee, Jang-Woo Ryu, Sangwoong Shin, Sungchul Park, Daihyun Lim, Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, SangJoon Hwang:
13.2 A 32Gb 8.0Gb/s/pin DDR5 SDRAM with a Symmetric-Mosaic Architecture in a 5th-Generation 10nm DRAM Process. ISSCC 2024: 234-236- 2023
- [c4]Daehyun Kwon, Heon Su Jeong, Jaemin Choi, Wijong Kim, Jae Woong Kim, Junsub Yoon, Jungmin Choi, Sanguk Lee, Hyunsub Norbert Rie, Jin-Il Lee, Jongbum Lee, Taeseong Jang, JunHyung Kim, Sanghee Kang, Jung-Bum Shin, Yanggyoon Loh, Chang-Yong Lee, Junmyung Woo, Hye-Seung Yu, Changhyun Bae, Reum Oh, Young-Soo Sohn, Changsik Yoo, Jooyoung Lee:
A 1.1V 6.4Gb/s/pin 24-Gb DDR5 SDRAM with a Highly-Accurate Duty Corrector and NBTI-Tolerant DLL. ISSCC 2023: 412-413 - 2021
- [c3]Seunghwan Hong, Chang-Hyun Bae, Yoo-Chang Sung, Jaewoong Kim, Junsub Yoon, Sangwoo Kim, Jin-Hyeok Baek, Cheongryong Cho, Useung Shin, Sang-Kyeom Kim, Hwan-Chul Jung, Ho-Jun Chang, Jang-Hoo Kim, Jeongsik Hwang, Hyunki Kim, Ki-Won Lee, Dongmin Kim, Han-Ki Jeong, Myung-O. Kim, Kyomin Sohn, Jeong-Don Ihm, Changsik Yoo, Sang Joon Hwang:
A Reflection and Crosstalk Canceling Continuous-Time Linear Equalizer for High-Speed DDR SDRAM. VLSI Circuits 2021: 1-2
2010 – 2019
- 2017
- [j1]Junsub Yoon, Seo Weon Heo, Jongsun Kim:
A fast-locking harmonic-free digital DLL for DDR3 and DDR4 SDRAMs. IEICE Electron. Express 14(2): 20161020 (2017) - [c2]Dongjun Park
, Junsub Yoon, Jongsun Kim:
A low-power SerDes for high-speed on-chip networks. ISOCC 2017: 252-253 - 2016
- [c1]Junsub Yoon, Jongsun Kim:
A MDLL-based multi-phase clock multiplier. ISOCC 2016: 247-248
Coauthor Index
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