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ORCIDGilles Reimbold
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2010 – 2019
- 2018
[j8]Xavier Garros, Antoine Laurent, Alexandre Subirats, X. Federspiel, E. Vincent, Gilles Reimbold:
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors. Microelectron. Reliab. 80: 100-108 (2018)- [c10]Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik:
A new method for quickly evaluating reversible and permanent components of the BTI degradation. IRPS 2018: 6-1 - 2017
- [j7]Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello:
Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. Microelectron. Reliab. 79: 111-118 (2017) - [c9]William Vandendaele, Thomas Lorin, Romain Gwoziecki, Yannick Baines, Jérome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles
, Marc Plissonnier, Gilles Reimbold:
On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. ESSDERC 2017: 126-129 - 2016
- [j6]Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello:
Drain current model for short-channel triple gate junctionless nanowire transistors. Microelectron. Reliab. 63: 1-10 (2016) - [c8]Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot:
Analog performance of strained SOI nanowires down to 10K. ESSDERC 2016: 222-225 - 2015
- [j5]Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo:
Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectron. Reliab. 55(9-10): 1417-1421 (2015) - [c7]J. Pelloux-Prayer, Mikaël Cassé, François Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold:
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. ESSDERC 2015: 210-213 - [c6]Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo, Gilles Reimbold, Michel Haond:
Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices. ESSDERC 2015: 246-249 - [c5]Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu:
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. IRPS 2015: 2 - 2014
- [c4]Guillaume Besnard, Xavier Garros, François Andrieu, Phuong Nguyen, William van den Daele, Patrick Reynaud, Walter Schwarzenbach, Daniel Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu:
Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes. ESSDERC 2014: 226-229 - 2013
- [c3]Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold:
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. ESSDERC 2013: 300-303 - 2012
- [c2]Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold:
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. ESSDERC 2012: 73-76 - [c1]Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo:
Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. ESSDERC 2012: 286-289
2000 – 2009
- 2009
- [j4]Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, François Martin, Claudia Wiemer, F. Boulanger:
Process dependence of BTI reliability in advanced HK MG stacks. Microelectron. Reliab. 49(9-11): 982-988 (2009) - 2007
- [j3]Gilles Reimbold, Jérôme Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, François Martin:
Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. Microelectron. Reliab. 47(4-5): 489-496 (2007) - [j2]Charles Leroux, Gérard Ghibaudo, Gilles Reimbold:
Accurate determination of flat band voltage in advanced MOS structure. Microelectron. Reliab. 47(4-5): 660-664 (2007) - 2001
- [j1]Gilles Reimbold, T. Poiroux:
Plasma charging damage mechanisms and impact on new technologies. Microelectron. Reliab. 41(7): 959-965 (2001)
Coauthor Index
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