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2020 – today
- 2024
[c7]Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen:
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS 2024: 3- 2020
- [c6]Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher
, Christian Schleich, Tibor Grasser:
Similarities and Differences of BTI in SiC and Si Power MOSFETs. IRPS 2020: 1-7 - [c5]Bernhard Ruch, Gregor Pobegen, Christian Schleich, Tibor Grasser:
Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping. IRPS 2020: 1-6
2010 – 2019
- 2018
- [j2]Thomas Aichinger, Gerald Rescher, Gregor Pobegen:
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectron. Reliab. 80: 68-78 (2018) - [c4]Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer:
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS 2018: 2 - 2015
- [c3]Roberta Stradiotto, Gregor Pobegen, Clemens Ostermaier, Tibor Grasser:
On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements. ESSDERC 2015: 72-75 - [c2]Peter Lagger, S. Donsa, P. Spreitzer, Gregor Pobegen, M. Reiner, H. Naharashi, J. Mohamed, H. Mosslacher, G. Prechtl, Dionyz Pogany, Clemens Ostermaier:
Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters. IRPS 2015: 6 - [c1]Gregor Pobegen, Andreas Krassnig:
Instabilities of SiC MOSFETs during use conditions and following bias temperature stress. IRPS 2015: 6 - 2011
- [j1]Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel:
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. Microelectron. Reliab. 51(9-11): 1530-1534 (2011)
Coauthor Index
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