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ORCIDJoão Antonio Martino
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2020 – today
- 2021
[j10]Carlos H. S. Coelho
, João Antonio Martino, Marcello Bellodi, Eddy Simoen, Anabela Veloso, Paula Ghedini Der Agopian:
Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices. Microelectron. J. 117: 105277 (2021)
2010 – 2019
- 2019
- [j9]Katia Regina Akemi Sasaki, Ricardo C. Rangel, Leonardo S. Yojo, João Antonio Martino:
Tradeoff between the transistor reconfigurable technology and the zero-temperature-coefficient (ZTC) bias point on BESOI MOSFET. Microelectron. J. 94 (2019) - [c4]R. S. Rangel, Paula Ghedini Der Agopian, João Antonio Martino:
Performance evaluation of Tunnel-FET basic amplifier circuits. LASCAS 2019: 21-24 - [e2]João Antonio Martino, Marcelo Lubaszewski, Matteo Sonza Reorda:
Proceedings of the 32nd Symposium on Integrated Circuits and Systems Design, SBCCI 2019, Sao Paulo, Brazil, August 26-30, 2019. ACM 2019, ISBN 978-1-4503-6844-5 [contents] - 2014
- [j8]Maria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys:
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectron. Reliab. 54(11): 2349-2354 (2014) - 2012
- [j7]Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello:
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. Microelectron. Reliab. 52(3): 519-524 (2012) - 2010
- [e1]João Antonio Martino, Guido Araujo, Alex Orailoglu, Felipe Klein:
Proceedings of the 23rd Annual Symposium on Integrated Circuits and Systems Design, SBCCI 2010, São Paulo, Brazil, September 6-9, 2010. ACM 2010, ISBN 978-1-4503-0152-7 [contents]
2000 – 2009
- 2007
- [j6]Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys:
Study of the linear kink effect in PD SOI nMOSFETs. Microelectron. J. 38(1): 114-119 (2007) - 2006
- [j5]Salvador Pinillos Gimenez, Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre:
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS. Microelectron. J. 37(1): 31-37 (2006) - [j4]Marcelo Antonio Pavanello, Paula Ghedini Der Agopian, João Antonio Martino, Denis Flandre:
Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications. Microelectron. J. 37(2): 137-144 (2006) - [j3]Milene Galeti, Marcelo Antonio Pavanello, João Antonio Martino:
Evaluation of graded-channel SOI MOSFET operation at high temperatures. Microelectron. J. 37(7): 601-607 (2006) - [j2]Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys:
Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. Microelectron. J. 37(8): 681-685 (2006) - [j1]L. M. Camillo, João Antonio Martino, Eddy Simoen, Cor Claeys:
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs. Microelectron. J. 37(9): 952-957 (2006) - 2003
- [c3]Salvador Pinillos Gimenez, Marcelo Antonio Pavanello, João Antonio Martino, Stephane Adriaensen, Denis Flandre:
Design of Operational Transconductance Amplifiers with Improved Gain by Using Graded-Channel SOI nMOSFETs. SBCCI 2003: 26- - 2001
- [c2]Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre:
Analog Circuit Design Using Graded-Channel SOI NMOSFETS. SBCCI 2001: 130-135 - 2000
- [c1]Victor Sonnenberg, João Antonio Martino:
Determination of Silicon Film Thickness in SOI Capacitors. LATW 2000: 181-184
Coauthor Index
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