"A Large "Read" and "Write" Margins, Low Leakage Power, Six-Transistor ..."

Tadayoshi Enomoto, Nobuaki Kobayashi (2011)

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DOI: 10.1587/TRANSELE.E94.C.530

access: closed

type: Journal Article

metadata version: 2020-04-11

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Tadayoshi Enomoto, Nobuaki Kobayashi:
A Large "Read" and "Write" Margins, Low Leakage Power, Six-Transistor 90-nm CMOS SRAM. IEICE Trans. Electron. 94-C(4): 530-538 (2011)

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