"Trapped charge and stress induced leakage current (SILC) in tunnel ..."

Mario Lanza et al. (2009)

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DOI: 10.1016/J.MICROREL.2009.06.016

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type: Journal Article

metadata version: 2020-02-22

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Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani:
Trapped charge and stress induced leakage current (SILC) in tunnel SiO₂ layers of de-processed MOS non-volatile memory devices observed at the nanoscale. Microelectron. Reliab. 49(9-11): 1188-1191 (2009)

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