"Analysis of deep level defects in bipolar junction transistors irradiated ..."

Yao Ma et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.10.023

access: closed

type: Journal Article

metadata version: 2020-02-22

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Yao Ma, Pengfei Xu, Mingyue Guan, Filippo Boi, Gao Bo, Min Gong, Xue Wu, Yuxin Wang, Hua Wang, ZengQiang Niao:
Analysis of deep level defects in bipolar junction transistors irradiated by 2 MeV electrons. Microelectron. Reliab. 79: 149-152 (2017)

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