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Umberto Ravaioli
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2010 – 2019
- 2019
- [i1]Diab W. Abueidda, Mohammad Almasri, Rami Ammourah, Umberto Ravaioli, Iwona M. Jasiuk, Nahil A. Sobh:
Prediction and optimization of mechanical properties of composites using convolutional neural networks. CoRR abs/1906.00094 (2019) - 2018
- [j24]Ashutosh Dhekne, Umberto Ravaioli, Romit Roy Choudhury:
P2PLoc: Peer-to-Peer Localization of Fast-Moving Entities. Computer 51(10): 94-98 (2018) - [j23]Mohith Manjunath, Yi Zhang, Yeonsung Kim, Steve H. Yeo, Omar Sobh, Nathan Russell, Christian Followell, Colleen Bushell, Umberto Ravaioli, Jun S. Song:
ClusterEnG: an interactive educational web resource for clustering and visualizing high-dimensional data. PeerJ Comput. Sci. 4: e155 (2018) - 2010
- [j22]Reza Toghraee, Kyu-Il Lee, Umberto Ravaioli:
Simulation of Ion Permeation in Biological Membranes. Comput. Sci. Eng. 12(2): 43-47 (2010)
2000 – 2009
- 2009
- [r1]Umberto Ravaioli:
Quantum Phenomena in Semiconductor Nanostructures. Encyclopedia of Complexity and Systems Science 2009: 7400-7422 - 2007
- [j21]Umberto Ravaioli:
Simulation of nanoscale electronic systems. Adv. Comput. 71: 167-249 (2007) - 2006
- [j20]Baozeng Guo, Umberto Ravaioli, Maritin Staedele:
Full band Monte Carlo calculations of velocity-field characteristics of wurtzite ZnO. Comput. Phys. Commun. 175(7): 482-486 (2006) - [j19]Hyuck In Kwon, Umberto Ravaioli:
Simulation of electronic/ionic mixed conduction in solid ionic memory devices. Microelectron. J. 37(10): 1047-1051 (2006) - 2004
- [j18]Baozeng Guo, Umberto Ravaioli, Dengyuan Song:
Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach. Microelectron. J. 35(2): 117-123 (2004) - 2003
- [j17]Baozeng Guo, Umberto Ravaioli:
Differential negative resistance effect of output characteristics in deep sub-micrometer wurtzite AlGaN/GaN MODFETs. Sci. China Ser. F Inf. Sci. 46(3): 187-198 (2003) - 2001
- [j16]Asim Kepkep, Umberto Ravaioli, Brian Winstead:
Cluster-based Parallel 3-D Monte Carlo Device Simulation. VLSI Design 13(1-4): 51-56 (2001) - [j15]Jürgen Jakumeit, Torsten Mietzner, Umberto Ravaioli:
Efficient Silicon Device Simulation with the Local Iterative Monte Carlo Method. VLSI Design 13(1-4): 57-61 (2001) - [j14]Torsten Mietzner, Jürgen Jakumeit, Umberto Ravaioli:
Influence of Electron-Electron Interaction on Electron Distributions in Short Si-MOSFETs Analysed Using the Local Iterative Monte Carlo Technique. VLSI Design 13(1-4): 175-178 (2001) - [j13]Karl Hess, Umberto Ravaioli, M. Das Gupta, N. Aluru, Yves der Straaten, Robert S. Eisenberg:
Simulation of Biological Ionic Channels by Technology Computer-Aided Design. VLSI Design 13(1-4): 179-187 (2001) - [j12]Hideaki Tsuchiya, Brian Winstead, Umberto Ravaioli:
Quantum Potential Approaches for Nano-scale Device Simulation. VLSI Design 13(1-4): 335-340 (2001) - [j11]Alex Trellakis, Umberto Ravaioli:
Three-dimensional Spectral Solution of Schrödinger Equation. VLSI Design 13(1-4): 341-347 (2001)
1990 – 1999
- 1998
- [j10]S. Yamakawa, H. Ueno, Kotaro Taniguchi, C. Hamaguchi, K. Miyatsuji, K. Masaki, Umberto Ravaioli:
Electron Mobility and Monte Carlo device simulation of MOSFETs. VLSI Design 6(1-4): 27-30 (1998) - [j9]Umberto Ravaioli, Amanda Duncan, A. Pacelli, Carl J. Wordelman, Karl Hess:
Hierarchy of Full Band Structure Models for Monte Carlo Simulation. VLSI Design 6(1-4): 147-153 (1998) - [j8]Jürgen Jakumeit, Umberto Ravaioli, Karl Hess:
New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator. VLSI Design 6(1-4): 307-311 (1998) - [j7]Alex Trellakis, A. T. Galick, A. Pacelli, Umberto Ravaioli:
Comparison of Iteration Schemes for the Solution of the Multidimensional Schrödinger-Poisson Equations. VLSI Design 8(1-4): 105-109 (1998) - [j6]M. Macucci, A. T. Galick, Umberto Ravaioli:
Tunneling Between Multimode Stacked Quantum Wires. VLSI Design 8(1-4): 247-252 (1998) - [j5]Mahesh B. Patil, Umberto Ravaioli, Thomas Kerkhoven:
Numerical Evaluation of Iterative Schemes for Drift-diffusion Simulation. VLSI Design 8(1-4): 337-341 (1998) - [j4]Jürgen Jakumeit, Amanda Duncan, Umberto Ravaioli, Karl Hess:
Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method. VLSI Design 8(1-4): 343-347 (1998) - 1995
- [j3]Edwin C. Kan, Zhiping Yu, Robert W. Dutton, Datong Chen, Umberto Ravaioli:
Formulation of Macroscopic Transport Models for Numerical Simulation of Semiconductor Devices. VLSI Design 3(2): 211-224 (1995) - 1994
- [c1]Sridhar V. Iyer, Alan Beck, Umberto Ravaioli, Jeffrey A. Terstriep:
Distributed exploratorium for high performance computational techniques. SC 1994: 117-125 - 1990
- [j2]G. Hugh Song, Karl Hess, Thomas Kerkhoven, Umberto Ravaioli:
Two-dimensional simulation of quantum well lasers. Eur. Trans. Telecommun. 1(4): 375-381 (1990)
1980 – 1989
- 1985
- [j1]Umberto Ravaioli, Paolo Lugli, Mohamed A. Osman, David K. Ferry:
Advantages of Collocation Methods Over Finite Differences in One-Dimensional Monte Carlo Simulations of Submicron Devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 4(4): 541-545 (1985)
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