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ORCIDJung Pill Kim
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2010 – 2019
- 2019
[j19]Sara Choi
, Hong Keun Ahn, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Decoder for Short BCH Codes With High Decoding Efficiency and Low Power for Emerging Memories. IEEE Trans. Very Large Scale Integr. Syst. 27(2): 387-397 (2019)- [j18]Taehui Na, Byungkyu Song, Sara Choi, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS. IEEE Trans. Very Large Scale Integr. Syst. 27(11): 2548-2555 (2019) - 2018
- [j17]Taehui Na, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Data-Cell-Variation-Tolerant Dual-Mode Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 65-I(1): 163-174 (2018) - 2017
- [j16]Taehui Na, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS. IEEE J. Solid State Circuits 52(2): 496-504 (2017) - [j15]Xuebin Zhang, Jiangpeng Li, Hao Wang, Danni Xiong, Jerry Qu, Hyunsuk Shin, Jung Pill Kim, Tong Zhang:
Realizing Transparent OS/Apps Compression in Mobile Devices at Zero Latency Overhead. IEEE Trans. Computers 66(7): 1188-1199 (2017) - [j14]Byungkyu Song, Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area. IEEE Trans. Circuits Syst. II Express Briefs 64-II(6): 700-704 (2017) - 2016
- [j13]Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Read Disturbance Reduction Technique for Offset-Canceling Dual-Stage Sensing Circuits in Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. II Express Briefs 63-II(6): 578-582 (2016) - [j12]Taehui Na, Jisu Kim, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An Offset-Tolerant Dual-Reference-Voltage Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24(4): 1361-1370 (2016) - [j11]Sara Choi, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Corner-Aware Dynamic Gate Voltage Scheme to Achieve High Read Yield in STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24(9): 2851-2860 (2016) - [j10]Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Multiple-Cell Reference Scheme for Narrow Reference Resistance Distribution in Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24(9): 2993-2997 (2016) - [c6]Sara Choi, Taehui Na, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Area-optimal sensing circuit designs in deep submicrometer STT-RAM. ISCAS 2016: 1246-1249 - [c5]Beomsang Yoo, Taehui Na, Byungkyu Song, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Equalization scheme analysis for high-density spin transfer torque random access memory. ISOCC 2016: 99-100 - 2015
- [j9]Byungkyu Song, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(7): 1776-1784 (2015) - [j8]Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Double-Sensing-Margin Offset-Canceling Dual-Stage Sensing Circuit for Resistive Nonvolatile Memory. IEEE Trans. Circuits Syst. II Express Briefs 62-II(12): 1109-1113 (2015) - [c4]Taehui Na, Hanwool Jeong, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Efficiency analysis of importance sampling in deep submicron STT-RAM design using uncontrollable industry-compatible model parameter. ICECS 2015: 400-403 - [c3]Byungkyu Song, Taehui Na, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. ISLPED 2015: 365-370 - 2014
- [j7]Youngdon Jung, Jisu Kim, Kyungho Ryu, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An MTJ-based non-volatile flip-flop for high-performance SoC. Int. J. Circuit Theory Appl. 42(4): 394-406 (2014) - [j6]Jisu Kim, Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Split-Path Sensing Circuit for Spin Torque Transfer MRAM. IEEE Trans. Circuits Syst. II Express Briefs 61-II(3): 193-197 (2014) - [j5]Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(12): 3376-3385 (2014) - [j4]Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 22(7): 1620-1624 (2014) - [j3]Jisu Kim, Kyungho Ryu, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies. IEEE Trans. Very Large Scale Integr. Syst. 22(7): 1630-1634 (2014) - [c2]Taehui Na, Kyungho Ryu, Jisu Kim, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
High-performance low-power magnetic tunnel junction based non-volatile flip-flop. ISCAS 2014: 1953-1956 - 2012
- [j2]Kyungho Ryu, Jisu Kim, Jiwan Jung, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop. IEEE Trans. Very Large Scale Integr. Syst. 20(11): 2044-2053 (2012) - 2011
- [c1]Youngdon Jung, Jisu Kim, Kyungho Ryu, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
MTJ based non-volatile flip-flop in deep submicron technology. ISOCC 2011: 424-427
2000 – 2009
- 2003
- [j1]Jung Pill Kim, Woodward Yang, Han-Yuan Tan:
A low-power 256-Mb SDRAM with an on-chip thermometer and biased reference line sensing scheme. IEEE J. Solid State Circuits 38(2): 329-337 (2003)
Coauthor Index
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