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ORCIDRazali Ismail
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2010 – 2019
- 2014
[j8]Mehdi Saeidmanesh, Meisam Rahmani
, H. Karimi Feiz Karimi, M. Khaledian, Razali Ismail:
Analytical model for threshold voltage of double gate bilayer graphene field effect transistors. Microelectron. Reliab. 54(1): 44-48 (2014)- 2013
- [c5]Fatimah Hamid, Razali Ismail:
Simulation of Trigate FET with Semi-Cylindrical Channel to Reduce Corner Effect. UKSim 2013: 712-716 - 2010
- [j7]Desmond Chang Yih Chek, Michael L. P. Tan, Mohammad Taghi Ahmadi, Razali Ismail, Vijay K. Arora:
Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor. Microelectron. J. 41(9): 579-584 (2010) - [j6]Munawar Agus Riyadi, Ismail Saad, Razali Ismail:
Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-based vertical double gate MOSFET. Microelectron. J. 41(12): 827-833 (2010)
2000 – 2009
- 2009
- [j5]Ismail Saad, Michael L. P. Tan, Ing Hui Hii, Razali Ismail, Vijay K. Arora:
Ballistic mobility and saturation velocity in low-dimensional nanostructures. Microelectron. J. 40(3): 540-542 (2009) - [j4]Mohammad Taghi Ahmadi, Hui Houg Lau, Razali Ismail, Vijay K. Arora:
Current-voltage characteristics of a silicon nanowire transistor. Microelectron. J. 40(3): 547-549 (2009) - [j3]Ismail Saad, Michael L. P. Tan, Aaron C. E. Lee, Razali Ismail, Vijay K. Arora:
Scattering-limited and ballistic transport in a nano-CMOS circuit. Microelectron. J. 40(3): 581-583 (2009) - [c4]Ismail Saad, Razak M. A. Lee, Razali Ismail, Vijay K. Arora:
Physics-Based Modelling of Ballistic Transport in Nanoscale Transistor. Asia International Conference on Modelling and Simulation 2009: 729-734 - [c3]Munawar Agus Riyadi, Mohammad Taghi Ahmadi, Jatmiko E. Suseno, Kang Eng Siew, Ismail Saad, Razali Ismail, Vijay K. Arora:
Physics-Based Simulation of Carrier Velocity in 2-Dimensional P-Type MOSFET. Asia International Conference on Modelling and Simulation 2009: 735-738 - [c2]Jatmiko E. Suseno, Muhammad Taghi Ahmad, Munawar Agus Riyadi, Razali Ismail:
Extraction of SPICE Model for Double Gate Vertical MOSFET. Asia International Conference on Modelling and Simulation 2009: 761-766 - 2008
- [j2]Ismail Saad, Razali Ismail:
Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method. Microelectron. J. 39(12): 1538-1541 (2008) - [c1]Mohammad Taghi Ahmadi, Ismail Saad, Razali Ismail, Vijay K. Arora:
The Ultimate Drift Velocity in Two Dimensional Quantum Limit. Asia International Conference on Modelling and Simulation 2008: 980-984
1990 – 1999
- 1990
- [j1]Razali Ismail, Gehan A. J. Amaratunga:
Adaptive meshing schemes for simulating dopant diffusion. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 9(3): 276-289 (1990)
Coauthor Index
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