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2020 – today
- 2023
[c7]M. Jamil, S. Mukhopadhay, M. Ghoneim, A. Shailos, Chetan Prasad, Inanc Meric, Stephen Ramey:
Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS Technology. IRPS 2023: 1-5- [c6]Walid M. Hafez, P. Agnihotri, M. Asoro, M. Aykol, B. Bains, R. Bambery, M. Bapna, A. Barik, A. Chatterjee, P. C. Chiu, T. Chu, C. Firby
, K. Fischer, M. Fradkin, Hannes Greve, A. Gupta, E. Haralson, M. Haran, Jeffery Hicks, A. Illa, M. Jang, S. Klopcic, M. Kobrinsky, B. Kuns, H.-h. Lai, G. Lanni, S.-H. Lee, N. Lindert, C.-l. Lo, Y. Luo, G. Malyavanatham, B. Marinkovic, Y. Maymon, M. Nabors, J. Neirynck, P. Packan, A. Paliwal, L. Pantisano, Leif Paulson, Padma Penmatsa, Chetan Prasad, Conor Puls, T. Rahman, R. Ramaswamy, S. Samant, Bernhard Sell, K. Sethi, F. Shah, M. Shamanna, K. Shang, Q. Li, M. Sibakoti, J. Stoeger, Nathan Strutt, R. Thirugnanasambandam, C. Tsai, X. Wang, A. Wang, S.-j. Wu, Q. Xu, X.-h. Zhong, S. Natarajan:
Intel PowerVia Technology: Backside Power Delivery for High Density and High-Performance Computing. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c5]Bernhard Sell, S. An, J. Armstrong, D. Bahr, B. Bains, R. Bambery, K. Bang, D. Basu, S. Bendapudi, D. Bergstrom, R. Bhandavat, S. Bhowmick, M. Buehler, D. Caselli, S. Cekli, Vrsk. Chaganti, Y. J. Chang, K. Chikkadi, T. Chu, T. Crimmins, G. Darby, C. Ege, P. Elfick, Tyler Elko-Hansen, S. Fang, C. Gaddam, M. Ghoneim, H. Gomez, S. Govindaraju, Z. Guo, Walid M. Hafez, M. Haran, M. Hattendorf, S. Hu, A. Jain, S. Jaloviar, M. Jang, J. Kameswaran, V. Kapinus, A. Kennedy, S. Klopcic, D. Krishnan, J. Leib, Y.-T. Lin, N. Lindert, G. Liu, O. Loh, Y. Luo, S. Mani, M. Mleczko, S. Mocherla, P. Packan, M. Paik, A. Paliwal, R. Pandey, K. Patankar, L. Pipes, P. Plekhanov, Chetan Prasad, M. Prince, G. Ramalingam, R. Ramaswamy, J. Riley, J. R. Sanchez Perez, Justin Sandford, A. Sathe, F. Shah, H. Shim, S. Subramanian, S. Tandon, M. Tanniru, D. Thakurta, T. Troeger, X. Wang, C. Ward, A. Welsh, S. Wickramaratne, J. Wnuk, S. Q. Xu, P. Yashar, J. Yaung, K. Yoon, N. Young:
Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing. VLSI Technology and Circuits 2022: 282-283 - 2020
- [c4]Chetan Prasad, Sunny Chugh, Hannes Greve, I-chen Ho, Enamul Kabir, Cheyun Lin, Mahjabin Maksud, Steven R. Novak, Benjamin Orr, Keun Woo Park, Anthony Schmitz, Zhizheng Zhang, Peng Bai, Doug B. Ingerly, Emre Armagan, Hsinwei Wu, Patrick N. Stover, Lance Hibbeler, Michael O'Day, Daniel Pantuso:
Silicon Reliability Characterization of Intel's Foveros 3D Integration Technology for Logic-on-Logic Die Stacking. IRPS 2020: 1-5
2010 – 2019
- 2018
- [j1]Stephen M. Ramey, Chetan Prasad, A. Rahman:
Technology scaling implications for BTI reliability. Microelectron. Reliab. 82: 42-50 (2018) - 2015
- [c3]Stephen Ramey, M. Chahal, P. Nayak, Steven R. Novak, Chetan Prasad, Jeffery Hicks:
Transistor reliability variation correlation to threshold voltage. IRPS 2015: 3 - [c2]Chia-Hong Jan, F. Al-amoody, H.-Y. Chang, T. Chang, Y.-W. Chen, N. Dias, Walid M. Hafez, Doug B. Ingerly, M. Jang, Eric Karl, S. K.-Y. Shi, K. Komeyli, H. Kilambi, A. Kumar, K. Byon, C.-G. Lee, J. Lee, T. Leo, P.-C. Liu, N. Nidhi, R. Olac-vaw, C. Petersburg, K. Phoa, Chetan Prasad, C. Quincy, R. Ramaswamy, T. Rana, L. Rockford, Aravinth Subramaniam, C. Tsai, Peter Vandervoorn, L. Yang, A. Zainuddin, Peng Bai:
A 14 nm SoC platform technology featuring 2nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um2 SRAM cells, optimized for low power, high performance and high density SoC products. VLSIC 2015: 12- - 2014
- [c1]Chetan Prasad:
Advanced CMOS reliability challenges. VLSI-DAT 2014: 1-2
Coauthor Index
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