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Renan Trevisoli Doria
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2020 – today
- 2024
- [j5]Renan Trevisoli, Lícia S. C. Lima, Humberto Pereira Da Paz, Rodrigo Trevisoli Doria, Ivan R. S. Casella, Carlos Eduardo Capovilla:
Evolutionary algorithm for minimizing the temperature influence of low power RF Energy Harvesting circuits. Microelectron. J. 147: 106166 (2024) - 2023
- [j4]Humberto Pereira Da Paz, Vinicius S. da Silva, Renan Diniz, Renan Trevisoli, Carlos Eduardo Capovilla, Ivan Roberto Santana Casella:
Temperature Analysis of Schottky Diodes Rectifiers for Low-Power RF Energy Harvesting Applications. IEEE Access 11: 54122-54132 (2023) - [c5]Rafael Corsi Ferrão, Igor dos Santos Montagner, Renan Trevisoli:
Moving Beyond VHDL in Introductory Computer Architecture Courses: An Exploration of MyHDL as a Modern Alternative. FIE 2023: 1-9 - [c4]Lícia S. C. Lima, Renan Trevisoli, Ricardo Suyama, Ivan R. S. Casella, Rodrigo Trevisoli Doria, Carlos Eduardo Capovilla:
Optimizing RF Energy Harvesting Systems for IoT Applications using Reinforcement Learning. SIoT 2023: 1-5 - 2022
- [j3]Renan Trevisoli, Humberto Pereira Da Paz, Vinicius S. da Silva, Rodrigo Trevisoli Doria, Ivan R. S. Casella, Carlos Eduardo Capovilla:
Modeling Schottky Diode Rectifiers Considering the Reverse Conduction for RF Wireless Power Transfer. IEEE Trans. Circuits Syst. II Express Briefs 69(3): 1732-1736 (2022) - [c3]Fernando J. Costa, Renan Trevisoli, Rodrigo Trevisoli Doria:
SOI UTBB Capacitive Cross-Coupling Effects in Ultimate Technological Nodes. LASCAS 2022: 1-4
2010 – 2019
- 2019
- [c2]Renan Trevisoli, Rodrigo Trevisoli Doria, Sylvain Barraud, Marcelo Antonio Pavanello:
Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless Transistors. ESSDERC 2019: 194-197 - 2017
- [j2]Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello:
Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. Microelectron. Reliab. 79: 111-118 (2017) - [c1]Renan Trevisoli Doria, Rodrigo Trevisoli Doria, Michelly de Souza, Marcelo Antonio Pavanello, Sylvain Barraud:
A new method for junctionless transistors parameters extraction. ESSDERC 2017: 66-69 - 2012
- [j1]Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello:
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. Microelectron. Reliab. 52(3): 519-524 (2012)
Coauthor Index
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last updated on 2024-06-03 00:14 CEST by the dblp team
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