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2020 – today
- 2023
[c6]Mischa Thesberg, Franz Schanovsky, Zlatan Stanojevic, Oskar Baumgartner
, Markus Karner:
A Study of the Variability and Design Considerations of Ferroelectric VNAND Memories With Polycrystalline Films Using An Experimentally Validated TCAD Model. ESSDERC 2023: 77-80- 2021
- [c5]Franz Schanovsky, Devin Verreck, Antonio Arreghini, Gerhard Rzepa, Zlatan Stanojevic, Christian Kernstock, Oskar Baumgartner, Maarten Rosmeulen, Markus Karner:
A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics. IMW 2021: 1-4 - [c4]Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic:
Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. IRPS 2021: 1-6
2010 – 2019
- 2018
- [c3]Zlatan Stanojevic, Georg Strof, Franz Schanovsky, Klaus Steiner, Oskar Baumgartner, Christian Kernstock, Markus Karner:
Cell Designer - a Comprehensive TCAD-Based Framework for DTCO of Standard Logic Cells. ESSDERC 2018: 202-205 - [c2]Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer:
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS 2018: 2 - 2017
- [c1]Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser:
Physical modeling of the hysteresis in M0S2 transistors. ESSDERC 2017: 284-287
Coauthor Index
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