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ORCIDHironori Akamatsu
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2000 – 2009
- 2008
[j8]Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka, Hiroshi Makino, Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Toshiyuki Oashi, Keiji Hashimoto, Akio Sebe, Gen Okazaki, Katsuji Satomi, Hironori Akamatsu, Hirofumi Shinohara:
A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature Variations. IEEE J. Solid State Circuits 43(1): 180-191 (2008)- [j7]Satoshi Ishikura, Marefusa Kurumada, Toshio Terano, Yoshinobu Yamagami, Naoki Kotani, Katsuji Satomi, Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Toshiyuki Oashi, Hiroshi Makino, Hirofumi Shinohara, Hironori Akamatsu:
A 45 nm 2-port 8T-SRAM Using Hierarchical Replica Bitline Technique With Immunity From Simultaneous R/W Access Issues. IEEE J. Solid State Circuits 43(4): 938-945 (2008) - [j6]Toshikazu Suzuki, Hiroyuki Yamauchi
, Yoshinobu Yamagami, Katsuji Satomi, Hironori Akamatsu:
A Stable 2-Port SRAM Cell Design Against Simultaneously Read/Write-Disturbed Accesses. IEEE J. Solid State Circuits 43(9): 2109-2119 (2008) - 2007
- [c3]Toshikazu Suzuki, Hiroyuki Yamauchi, Katsuji Satomi, Hironori Akamatsu:
A Stable SRAM Mitigating Cell-Margin Asymmetricity with A Disturb-Free Biasing Scheme. CICC 2007: 233-236 - [c2]Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka, Hiroshi Makino, Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Toshiyuki Oashi, Keiji Hashimoto, Akio Sebe, Gen Okazaki, Katsuji Satomi, Hironori Akamatsu, Hirofumi Shinohara:
A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations. ISSCC 2007: 326-606 - 2006
- [j5]Toshikazu Suzuki, Yoshinobu Yamagami, Ichiro Hatanaka, Akinori Shibayama, Hironori Akamatsu, Hiroyuki Yamauchi:
A sub-0.5-V operating embedded SRAM featuring a multi-bit-error-immune hidden-ECC scheme. IEEE J. Solid State Circuits 41(1): 152-160 (2006) - 2005
- [j4]Toshikazu Suzuki, Yoshinobu Yamagami, Ichiro Hatanaka, Akinori Shibayama, Hironori Akamatsu, Hiroyuki Yamauchi:
0.3-1.5 V Embedded SRAM Core with Write-Replica Circuit Using Asymmetrical Memory Cell and Source-Level-Adjusted Direct-Sense-Amplifier. IEICE Trans. Electron. 88-C(4): 630-638 (2005)
1990 – 1999
- 1997
- [j3]Hiroyuki Yamauchi, Toru Iwata, Hironori Akamatsu, Akira Matsuzawa:
A 0.5 V single power supply operated high-speed boosted and offset-grounded data storage (BOGS) SRAM cell architecture. IEEE Trans. Very Large Scale Integr. Syst. 5(4): 377-387 (1997) - 1996
- [c1]Hiroyuki Yamauchi, Toru Iwata, Hironori Akamatsu, Akira Matsuzawa:
A 0.5V/100 MHz over-VCC grounded data storage (OVGS) SRAM cell architecture with boosted bit-line and offset source over-driving schemes. ISLPED 1996: 49-54 - 1995
- [j2]Hiroyuki Yamauchi, Hironori Akamatsu, Tsutomu Fujita:
An asymptotically zero power charge-recycling bus architecture for battery-operated ultrahigh data rate ULSI's. IEEE J. Solid State Circuits 30(4): 423-431 (1995) - 1994
- [j1]Hisakazu Kotani, Hironori Akamatsu, Yasushi Naito, Toyokazu Fujii, Tohru Iwata, Toshiaki Tsuji, Yutaka Itoh, Norisato Shimizu, Junji Hirase, Yoshiyuki Shibata, Kazuhiro Yamashita, Takashi Hori, Tsutomu Fujita:
A 256-Mb DRAM with 100 MHz serial I/O ports for storage of moving pictures. IEEE J. Solid State Circuits 29(11): 1310-1316 (1994)
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