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2020 – today
- 2022
[c14]Yuta Ueda, Yusuke Saito, Takahiko Shindo, Shigeru Kanazawa, Wataru Kobayashi, Hideaki Matsuzaki, Mitsuteru Ishikawa:
Nanosecond-scale Hitless λ-switching of SOA-integrated Electro-optically Tunable RTF Laser with +/-2.5-GHz Dynamic Frequency Accuracy. OFC 2022: 1-3- 2020
- [j9]Hiroshi Hamada
, Takuya Tsutsumi, Hideaki Matsuzaki, Takuya Fujimura, Ibrahim Abdo, Atsushi Shirane, Kenichi Okada, Go Itami, Ho-Jin Song, Hiroki Sugiyama, Hideyuki Nosaka:
300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers. IEEE J. Solid State Circuits 55(9): 2316-2335 (2020) - [c13]Hiroshi Hamada, Takuya Tsutsumi, Adam Pander, Masahito Nakamura, Go Itami, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka:
230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology. BCICTS 2020: 1-4 - [c12]Yuta Shiratori, Takuya Hoshi, Hideaki Matsuzaki:
Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate. BCICTS 2020: 1-4 - [c11]Masahiro Nada, Fumito Nakajima, Shoko Tatsumi, Yuki Yamada, Yasuhiko Nakanishi, Toshihide Yoshimatsu, Kimikazu Sano, Hideaki Matsuzaki:
Inverted p-down pin photodiode exceeding 70-GHz bandwidth featuring low operating bias voltage of 2 V. ECOC 2020: 1-4 - [c10]Yusuke Saito, Yuta Ueda, Takahiko Shindo, Shigeru Kanazawa, Hideaki Matsuzaki, Mitsuteru Ishikawa:
Burst-Tolerant λ-Switching of Electro-Optically Tunable Reflection-type Transversal Filter Laser with Single Active Region. ECOC 2020: 1-4 - [c9]Shigeru Kanazawa, Takahiko Shindo, Mingchen Chen, Naoki Fujiwara, Masahiro Nada, Toshihide Yoshimatsu, Atsushi Kanda, Yasuhiko Nakanishi, Fumito Nakajima, Kimikazu Sano, Yozo Ishikawa, Kazuyo Mizuno, Hideaki Matsuzaki:
High Output Power and Compact LAN-WDM EADFB Laser TOSA for 4 × 100-Gbit/s/λ 40-km Fiber-Amplifier-Less Transmission. OFC 2020: 1-3
2010 – 2019
- 2019
- [j8]Takuya Hoshi, Norihide Kashio, Yuta Shiratori, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki:
InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage. IEICE Electron. Express 16(3): 20181125 (2019) - [c8]Hiroshi Hamada, Takuya Tsutsumi, Go Itami, Hiroki Sugiyama, Hideaki Matsuzaki, Kenichi Okada, Hideyuki Nosaka:
300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT Technology. BCICTS 2019: 1-4 - 2018
- [j7]Toshihide Yoshimatsu, Masahiro Nada, Shigeru Kanazawa, Fumito Nakajima, Hideaki Matsuzaki, Kimikazu Sano:
Dispersion tolerance of 100-Gbit/s PAM4 optical link utilizing high-speed avalanche photodiode receiver. IEICE Electron. Express 15(16): 20180624 (2018) - [c7]Masahiro Nada, Toshihide Yoshimatsu, Yoshifumi Muramoto, Tetsuichiro Ohno, Fumito Nakajima, Hideaki Matsuzaki:
106-Gbit/s PAM4 40-km Transmission Using an Avalanche Photodiode With 42-GHz Bandwidth. OFC 2018: 1-3 - 2017
- [j6]Wataru Kobayashi, Naoki Fujiwara, Takahiko Shindo, Yoshitaka Ohiso, Shigeru Kanazawa, Hiroyuki Ishii, Koichi Hasebe, Hideaki Matsuzaki, Mikitaka Itoh:
Advantages of SOA Assisted Extended Reach EADFB Laser (AXEL) for Operation at Low Power and with Extended Transmission Reach. IEICE Trans. Electron. 100-C(10): 759-766 (2017) - [c6]Koichi Hasebe, Wataru Kobayashi, Naoki Fujiwara, Takahiko Shindo, Toshihide Yoshimatsu, Shigeru Kanazawa, Tetsuichiro Ohno, Hiroaki Sanjoh, Yoshitaka Ohiso, Hiroyuki Ishii, Yoshiaki Sone, Hideaki Matsuzaki:
28-Gbit/s 80-km transmission using SOA-assisted extended-reach EADFB laser (AXEL). OFC 2017: 1-3 - 2016
- [j5]Norihide Kashio, Takuya Hoshi, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki:
Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage. IEICE Trans. Electron. 99-C(5): 522-527 (2016) - [c5]Masahiro Nada, Takuya Hoshi, Shigeru Kanazawa, Toshikazu Hashimoto, Hideaki Matsuzaki:
56-Gbit/s 40-km optical-amplifier-less transmission with NRZ format using high-speed avalanche photodiodes. OFC 2016: 1-3 - 2015
- [c4]Masahiro Nada, Shigeru Kanazawa, Hiroshi Yamazaki, Yasuhiko Nakanishi, Wataru Kobayashi, Yoshiyuki Doi, Takaharu Ohyama, Tetsuichiro Ohno, Kiyoto Takahata, Toshikazu Hashimoto, Hideaki Matsuzaki:
High-linearity avalanche photodiode for 40-km transmission with 28-Gbaud PAM4. OFC 2015: 1-3 - 2014
- [c3]Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Toshihide Yoshimatsu, Hideaki Matsuzaki:
High-speed avalanche photodiodes for 100-Gb/s systems and beyond. ECOC 2014: 1-3
2000 – 2009
- 2006
- [j4]Hideaki Matsuzaki, Takashi Maruyama, Takatomo Enoki, Masami Tokumitsu:
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs. IEICE Trans. Electron. 89-C(7): 949-953 (2006) - [j3]Koji Inafune, Eiichi Sano, Hideaki Matsuzaki, Toshihiko Kosugi, Takatomo Enoki:
W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs. IEICE Trans. Electron. 89-C(7): 954-958 (2006) - 2004
- [j2]Hideaki Matsuzaki, Kimikazu Sano, Takatomo Enoki:
Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors. IEICE Electron. Express 1(2): 24-28 (2004) - [j1]Hideaki Matsuzaki, Hiroki Sugiyama, Haruki Yokoyama, Takashi Kobayashi, Takatomo Enoki:
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors. IEICE Electron. Express 1(11): 292-297 (2004)
1990 – 1999
- 1999
- [c2]Masafumi Yamamoto, Hideaki Matsuzaki, Toshihiro Itoh, Takao Waho, T. Akeyoshi, J. Osaka:
Ultrahigh-Speed Circuits Using Resonant Tunneling Devices. Great Lakes Symposium on VLSI 1999: 150-153 - [c1]Hideaki Matsuzaki, Toshihiro Itoh, Masafumi Yamamoto:
A Novel High-Speed Flip-Flop Circuit Using RTDs and HEMTs. Great Lakes Symposium on VLSI 1999: 154-157
Coauthor Index
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