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ORCIDS. Bruyère
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2000 – 2009
- 2005
[j9]G. Ribes, S. Bruyère, Mickael Denais, David Roy, Gérard Ghibaudo:
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. Microelectron. Reliab. 45(5-6): 841-844 (2005)- [j8]G. Ribes, S. Bruyère, Mickael Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectron. Reliab. 45(12): 1842-1854 (2005) - 2003
- [j7]Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki
, G. Pananakakis, Gérard Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43(8): 1199-1202 (2003) - [j6]G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard:
New insights into the change of voltage acceleration and temperature activation of oxide breakdown. Microelectron. Reliab. 43(8): 1211-1214 (2003) - [j5]C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent:
MIM capacitance variation under electrical stress. Microelectron. Reliab. 43(8): 1237-1240 (2003) - 2002
- [j4]David Roy, S. Bruyère, E. Vincent, Frederic Monsieur:
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. Microelectron. Reliab. 42(9-11): 1497-1500 (2002) - [j3]Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Gate oxide Reliability assessment optimization. Microelectron. Reliab. 42(9-11): 1505-1508 (2002) - 2001
- [j2]Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectron. Reliab. 41(9-10): 1295-1300 (2001) - [j1]S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectron. Reliab. 41(9-10): 1367-1372 (2001)
Coauthor Index
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