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ORCIDAlbena Paskaleva
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2020 – today
- 2022
[j15]Sandra Veljkovic
, Nikola Mitrovic, Vojkan Davidovic, Snezana Golubovic, Snezana Djoric-Veljkovic, Albena Paskaleva, Dencho Spassov, Srboljub Stankovic, Marko S. Andjelkovic, Zoran Prijic, Ivica Manic, Aneta Prijic, Goran S. Ristic, Danijel Dankovic:
Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. J. Circuits Syst. Comput. 31(18): 2240003:1-2240003:25 (2022)
2010 – 2019
- 2018
- [j14]Danijel Dankovic, Ivica Manic, Aneta Prijic, Vojkan Davidovic, Zoran Prijic, Snezana Golubovic, Snezana Djoric-Veljkovic, Albena Paskaleva, D. Spassov, Ninoslav Stojadinovic:
A review of pulsed NBTI in P-channel power VDMOSFETs. Microelectron. Reliab. 82: 28-36 (2018) - 2014
- [j13]Elena Atanassova, Nenad Novkovski, D. Spassov, Albena Paskaleva, Aleksandar Skeparovski:
Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack. Microelectron. Reliab. 54(2): 381-387 (2014) - 2012
- [j12]Elena Atanassova, Albena Paskaleva, D. Spassov:
Doped Ta2O5 and mixed HfO2-Ta2O5 films for dynamic memories applications at the nanoscale. Microelectron. Reliab. 52(4): 642-650 (2012) - 2011
- [j11]D. Spassov, Elena Atanassova, Albena Paskaleva:
Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity. Microelectron. Reliab. 51(12): 2102-2109 (2011) - 2010
- [j10]Elena Atanassova, Nenad Novkovski, Albena Paskaleva, D. Spassov:
Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks. Microelectron. Reliab. 50(6): 794-800 (2010)
2000 – 2009
- 2008
- [j9]Elena Atanassova, Albena Paskaleva, Nenad Novkovski:
Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks. Microelectron. Reliab. 48(4): 514-525 (2008) - [j8]Elena Atanassova, Ninoslav Stojadinovic, Albena Paskaleva:
Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode. Microelectron. Reliab. 48(8-9): 1193-1197 (2008) - 2007
- [j7]Elena Atanassova, Albena Paskaleva:
Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs. Microelectron. Reliab. 47(6): 913-923 (2007) - [j6]Elena Atanassova, D. Spassov, Albena Paskaleva:
Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors. Microelectron. Reliab. 47(12): 2088-2093 (2007) - [j5]Albena Paskaleva, Martin Lemberger, Anton J. Bauer:
Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers. Microelectron. Reliab. 47(12): 2094-2099 (2007) - 2005
- [j4]Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. Microelectron. Reliab. 45(5-6): 819-822 (2005) - [j3]Albena Paskaleva, Anton J. Bauer, Martin Lemberger:
Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films. Microelectron. Reliab. 45(7-8): 1124-1133 (2005) - 2003
- [j2]Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors. Microelectron. Reliab. 43(8): 1253-1257 (2003) - 2002
- [j1]Elena Atanassova, Albena Paskaleva:
Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs. Microelectron. Reliab. 42(2): 157-173 (2002)
Coauthor Index
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