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"Universal Behavioural Model for SiC Power MOSFETs Under Forward Bias."
Andrii Stefanskyi, Lukasz Starzak, Andrzej Napieralski (2018)
- Andrii Stefanskyi, Lukasz Starzak, Andrzej Napieralski:
Universal Behavioural Model for SiC Power MOSFETs Under Forward Bias. MIXDES 2018: 343-348
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