"Failure modes and mechanisms of InP-based and metamorphic high electron ..."

Gaudenzio Meneghesso, Enrico Zanoni (2002)

> Home

Details and statistics

DOI: 10.1016/S0026-2714(02)00045-8

access: closed

type: Journal Article

metadata version: 2024-05-07

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/MeneghessoZ02
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/MeneghessoZ02
Gaudenzio Meneghesso, Enrico Zanoni:
Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors. Microelectron. Reliab. 42(4-5): 685-708 (2002)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.