"Physical phenomena affecting performance and reliability of 4H-SiC bipolar ..."

Peter G. Muzykov et al. (2009)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2008.10.009

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/MuzykovKZCBAS09
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/MuzykovKZCBAS09
Peter G. Muzykov, Robert M. Kennedy, Qingchun Zhang, Craig Capell, Al Burk, Anant Agarwal, Tangali S. Sudarshan:
Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistors. Microelectron. Reliab. 49(1): 32-37 (2009)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.