default search action
"Comparison of electrical characteristics between AlGaN/GaN and ..."
Jian Ren et al. (2016)
- Jian Ren, Dawei Yan, Yang Zhai, Wenjie Mou, Xiaofeng Gu:
Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes. Microelectron. Reliab. 61: 82-86 (2016)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.