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ORCIDAlvin J. Joseph
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2020 – today
- 2022
[c6]Alvin J. Joseph, Vibhor Jain, John J. Pekarik, Ajay Raman, Shafi Syed, Liu Hang, Ned Cahoon, Randy Wolf, Venkat Vanukuru, Elan Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Qizhi Liu, Yves Ngu:
SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems. BCICTS 2022: 1-6- 2021
- [c5]John J. Pekarik, Vibhor Jain, Crystal Kenney, Judson Holt, Shweta Khokale, Sudesh Saroop, Jeffrey B. Johnson, Kenneth J. Stein, Viorel Ontalus, Christopher Durcan, Mona Nafari, Tayel Nesheiwat, Sangameshwar Saudari, Elahe Yarmoghaddam, Saloni Chaurasia, Alvin J. Joseph:
SiGe HBTs with ${f_{T}/f_{\max}\, \sim\, 375/510GHz}$ Integrated in 45nm PDSOI CMOS. BCICTS 2021: 1-4
2010 – 2019
- 2017
- [c4]Chaojiang Li, Min Wang, Taiyun Chi, Arvind Kumar, Myra Boenke, Dawn Wang, Ned Cahoon, Anirban Bandyopadhyay, Alvin J. Joseph, Hua Wang
:
5G mm-Wave front-end-module design with advanced SOI process. ASICON 2017: 1017-1020 - 2015
- [c3]Chaojiang Li, Xiaoxia Wang, Vibhor Jain, Hanyi Ding, Myra Boenke, Dawn Wang, Randy Wolf, Alvin J. Joseph:
2.4/5.5GHz LNA switch designs based on high resistive substrate 0.35um SiGe BiCMOS. ASICON 2015: 1-4 - 2014
- [j8]X. Shawn Wang, Xin Wang, Fei Lu, Chen Zhang, Zongyu Dong, Li Wang, Rui Ma, Zitao Shi, Albert Z. Wang, Mau-Chung Frank Chang, Dawn Wang, Alvin J. Joseph, C. Patrick Yue:
Concurrent Design Analysis of High-Linearity SP10T Switch With 8.5 kV ESD Protection. IEEE J. Solid State Circuits 49(9): 1927-1941 (2014) - 2013
- [c2]X. Shawn Wang, Xin Wang, Fei Lu, Li Wang, Rui Ma, Zongyu Dong, Li Sun, Albert Z. Wang, C. Patrick Yue, Dawn Wang, Alvin J. Joseph:
A smartphone SP10T T/R switch in 180-nm SOI CMOS with 8kV+ ESD protection by co-design. CICC 2013: 1-4
2000 – 2009
- 2008
- [j7]Alvin J. Joseph, John D. Gillis, Mark Doherty, Peter J. Lindgren, Rosemary A. Previti-Kelly, Ramana M. Malladi, Ping-Chuan Wang, Mete Erturk, Hanyi Ding, Ephrem G. Gebreselasie, Michael J. McPartlin, James S. Dunn:
Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications. IBM J. Res. Dev. 52(6): 635-648 (2008) - 2006
- [c1]James S. Dunn, David L. Harame, Alvin J. Joseph, Stephen A. St. Onge, Natalie B. Feilchenfeld, Louis D. Lanzerotti, Bradley A. Orner, Ephrem G. Gebreselasie, Jeffrey B. Johnson, Douglas D. Coolbaugh, Rick Rassel, Marwan Khater:
SiGe BiCMOS Trends - Today and Tomorrow. CICC 2006: 695-702 - 2005
- [j6]Alvin J. Joseph, David L. Harame, Basanth Jagannathan, Douglas D. Coolbaugh, David C. Ahlgren, John Magerlein, Louis D. Lanzerotti, Natalie B. Feilchenfeld, Stephen A. St. Onge, James S. Dunn, Edward J. Nowak:
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS. Proc. IEEE 93(9): 1539-1558 (2005) - 2004
- [j5]Jeffrey B. Johnson, Alvin J. Joseph, David C. Sheridan, Ramana M. Maladi, Per-Olof Brandt, Jonas Persson, Jesper Andersson, Are Bjorneklett, Ulrika Persson, Fariborz Abasi, Lars Tilly:
Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications. IEEE J. Solid State Circuits 39(10): 1605-1614 (2004) - 2003
- [j4]James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg G. Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson:
Foundation of rf CMOS and SiGe BiCMOS technologies. IBM J. Res. Dev. 47(2-3): 101-138 (2003) - [j3]Alvin J. Joseph, James S. Dunn, Greg G. Freeman, David L. Harame, Douglas Coolbaugh, Robert A. Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae-Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang:
Product applications and technology directions with SiGe BiCMOS. IEEE J. Solid State Circuits 38(9): 1471-1478 (2003) - 2002
- [j2]Greg G. Freeman, Mounir Meghelli, Young Kwark, Steven Zier, Alexander V. Rylyakov, Michael Sorna, Todd Tanji, Oswin M. Schreiber, Keith Walter, Jae-Sung Rieh, Basanth Jagannathan, Alvin J. Joseph, Seshadri Subbanna:
40-Gb/s circuits built from a 120-GHz fT SiGe technology. IEEE J. Solid State Circuits 37(9): 1106-1114 (2002) - 2001
- [j1]Guofu Niu, Zhenrong Jin, John D. Cressler, Rao Rapeta, Alvin J. Joseph, David L. Harame:
Transistor noise in SiGe HBT RF technology. IEEE J. Solid State Circuits 36(9): 1424-1427 (2001)
Coauthor Index
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