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ORCIDYusuke Higashi
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2020 – today
- 2024
[c11]Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen:
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. IRPS 2024: 1-6- [c10]J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi:
Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. IRPS 2024: 36 - 2023
- [c9]Takamasa Hamai
, Kunifumi Suzuki, Reika Ichihara, Yusuke Higashi, Yoko Yoshimura, Kiwamu Sakuma, Kensuke Ota, Kota Takahashi, Kazuhiro Matsuo, Shosuke Fujii, Masumi Saitoh:
Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics. IRPS 2023: 1-5 - [c8]Harumi Seki, Reika Ichihara, Yusuke Higashi, Yasushi Nakasaki, Masumi Saitoh, Masamichi Suzuki:
Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V. IRPS 2023: 1-7 - [c7]Yuta Aiba, Yusuke Higashi, Hitomi Tanaka, Hiroki Tanaka, Fumie Kikushima, Toshio Fujisawa, Hideko Mukaida, Masayuki Miura, Tomoya Sanuki:
Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c6]Hitomi Tanaka, Yuta Aiba, Takashi Maeda, Kensuke Ota, Yusuke Higashi, Keiichi Sawa, Fumie Kikushima, Masayuki Miura, Tomoya Sanuki:
Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation. IMW 2022: 1-4 - [c5]J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi:
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS 2022: 1-6 - [c4]Yusuke Higashi, Tetsushi Ikeda, Hiroyuki Takai, Satoshi Iwaki:
Future route presentation to autonomous mobile wheelchair passengers using the movement of vibrotactile stimuli. SICE 2022: 749-754 - [c3]Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt:
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits 2022: 340-342
2010 – 2019
- 2019
- [c2]Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, Kaustuv Banerjee, Umberto Celano, Masamichi Suzuki, Dimitri Linten, Jan Van Houdt:
New Insights into the Imprint Effect in FE-HfO2 and its Recovery. IRPS 2019: 1-7 - 2018
- [c1]Yuichiro Mitani, Yusuke Higashi, Yasushi Nakasaki:
Study on mechanism of thermal curing in ultra-thin gate dielectrics. IRPS 2018: 3 - 2017
- [j2]Yusuke Higashi, Riichiro Takaishi, Koichi Kato, Masamichi Suzuki, Yasushi Nakasaki, Mitsuhiro Tomita, Yuichiro Mitani, Masuaki Matsumoto, Shohei Ogura, Katsuyuki Fukutani, Kikuo Yamabe:
Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. Microelectron. Reliab. 70: 12-21 (2017) - [j1]Takao Marukame, Kodai Ueyoshi, Tetsuya Asai, Masato Motomura, Alexandre Schmid, Masamichi Suzuki, Yusuke Higashi, Yuichiro Mitani:
Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation. IEEE Trans. Circuits Syst. II Express Briefs 64-II(4): 462-466 (2017)
Coauthor Index
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