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Jaroslav Kovác
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2020 – today
- 2020
- [c1]L'ubos Podlucký, Marián Vojs, Jozef Chovan, Vlastimil Rehácek, Jaroslav Kovác, Frantisek Uherek:
Optimization of SiON/SiOx structures fabrication process for optical waveguides. RADIOELEKTRONIKA 2020: 1-5
2010 – 2019
- 2012
- [j9]Jaroslav Kovác, Alexander Satka, Ales Chvála, D. Donoval, Peter Kordos, Sylvain L. Delage:
Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors. Microelectron. Reliab. 52(7): 1323-1327 (2012) - [j8]Nicola Wrachien, Daniel Bari, Jaroslav Kovác, Jan Jakabovic, Daniel Donoval, Gaudenzio Meneghesso, Andrea Cester:
Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure. Microelectron. Reliab. 52(9-10): 2490-2494 (2012)
2000 – 2009
- 2009
- [j7]Jaroslav Kovác, Jaroslava Skriniarová, Martin Florovic, J. Jakabovic, Jozef Chovan, R. Srnánek, A. Vincze, B. Sciana, D. Radziewicz, Iwona Zborowska-Lindert, M. Tlaczala:
Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor. Microelectron. J. 40(3): 562-564 (2009) - [j6]J. Jakabovic, Jaroslav Kovác, Martin Weis, Daniel Hasko, R. Srnánek, Peter Valent, Roland Resel:
Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors. Microelectron. J. 40(3): 595-597 (2009) - 2008
- [j5]D. Donoval, Martin Florovic, Dagmar Gregusová, Jaroslav Kovác, Peter Kordos:
High-temperature performance of AlGaN/GaN HFETs and MOSHFETs. Microelectron. Reliab. 48(10): 1669-1672 (2008) - 2007
- [j4]Jaroslava Skriniarová, Dusan Pudis, Ivan Martincek, Jaroslav Kovác, Norbert Tarjányi, Marián Veselý, I. Turek:
Periodic structures prepared by two-beam interference method. Microelectron. J. 38(6-7): 746-749 (2007) - 2006
- [j3]Daniel Hasko, Jaroslav Kovác, F. Uherek, Jaroslava Skriniarová, J. Jakabovic, L. Peternai:
Avalanche photodiode with sectional InGaAsP/InP charge layer. Microelectron. J. 37(6): 483-486 (2006) - [j2]Loránt Peternai, Jaroslav Kovác, Gert Irmer, Stanislav Hasenöhrl, Jozef Novák, Rudolf Srnánek:
Investigation of graded InxGa1-xP buffer by Raman scattering method. Microelectron. J. 37(6): 487-490 (2006) - [j1]Alexander Satka, J. Liday, R. Srnánek, A. Vincze, Daniel Donoval, Jaroslav Kovác, Marián Veselý, Miroslav Michalka:
Characterisation of titanium disilicide thin films. Microelectron. J. 37(11): 1389-1395 (2006)
Coauthor Index
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