"W-band fully passivated AlN/GaN HEMT device with 56% power-added ..."

F. Erdem Arkun et al. (2023)

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DOI: 10.1109/DRC58590.2023.10187016

access: closed

type: Conference or Workshop Paper

metadata version: 2023-08-08

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F. Erdem Arkun, Dan Denninghoff, Haidang Tran, Ryan Tran, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, Ivan Milosavljevic, Georges Siddiqi, Micha Fireman, Andrea L. Corrion, David Fanning, Christi Peterson, Ariel Getter, Andrew Clapper:
W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz. DRC 2023: 1-2

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