"A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using ..."

Qing Dong et al. (2018)

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DOI: 10.1109/ISSCC.2018.8310393

access: closed

type: Conference or Workshop Paper

metadata version: 2021-04-07

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Qing Dong, Zhehong Wang, Jongyup Lim, Yiqun Zhang, Yi-Chun Shih, Yu-Der Chih, Tsung-Yung Jonathan Chang, David T. Blaauw, Dennis Sylvester:
A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination. ISSCC 2018: 480-482

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