"Simulation study of an ultra-low specific on-resistance high-voltage ..."

Bo Yi et al. (2020)

> Home

Details and statistics

DOI: 10.1587/ELEX.16.20190673

access: open

type: Journal Article

metadata version: 2025-01-19

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/ieiceee/YiPZKCH20
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieiceee/YiPZKCH20
Bo Yi, Yi Feng Peng, Qing Zhao, MouFu Kong, Junji Cheng, Haimeng Huang:
Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer. IEICE Electron. Express 17(2): 20190673 (2020)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.