device parameter

With PCF scattering applied to the I-V curve calculation, the low-field electron mobility  , the low-field RS and RD corresponding to different gate biases are calculated and obtained, the detailed calculation for these parameters can be referenced in Cui et al[6,8], and the values of these parameters for sample 1 and sample 2 are shown in TABLE II and TABLE III, respectively. From TABLE II and TABLE III, it is shown that the low-field RS and RD corresponding to different gate biases for sample 1 and sample 2 are less varied, the reason is that the ratio of the gate length to the source-drain spacing for the both samples are small, the influence of PCF scattering on the RS and RD is weak.