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{{Short description|Common transistor type}}
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{{Use dmy dates|date=January 2021}}
{{Infobox electronic component
{{Infobox electronic component
|name = 2N7000 / 2N7002
|name = 2N7000 / 2N7002
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|pins = G = Gate, D = Drain, S = Source. The symbol doesn't always show the internal [[diode]] formed between the substrate and the source/drain/channel.
|pins = G = Gate, D = Drain, S = Source. The symbol doesn't always show the internal [[diode]] formed between the substrate and the source/drain/channel.
}}
}}
[[File:TO-92 Front with Pin Numbers.svg|thumb|right|The 2N7000 is housed in a [[TO92]] package, with lead '''1''' connected as the [[source (transistor)|source]], lead '''2''' as the [[gate (transistor)|gate]], and lead '''3''' as the [[drain (transistor)|drain]]. The BS170 has the source and drain leads interchanged.]]
[[File:TO-92_2N7000.svg|thumb|right|The 2N7000 is housed in a [[TO92]] package, with lead '''1''' connected as the [[source (transistor)|source]], lead '''2''' as the [[gate (transistor)|gate]], and lead '''3''' as the [[drain (transistor)|drain]]. The BS170 has the source and drain leads interchanged.]]
[[File:TO-236AA Front Top.svg|thumb|right|The 2N7002 variant is packaged in a TO-236 surface-mount package.]]
[[File:TO-236AA Front Top.svg|thumb|right|The 2N7002 variant is packaged in a TO-236 surface-mount package.]]


The '''2N7000''' and '''BS170''' are two different [[N-type semiconductor|N-channel]], [[Field-effect transistor#FET operation|enhancement-mode]] [[MOSFET]]s used for low-power switching applications, with different lead arrangements and current ratings. They are sometimes listed together on the same datasheet with other variants 2N7002, VQ1000J, and VQ1000P.<ref name=vishay>
The '''2N7000''' is an [[N-type semiconductor|N-channel]], [[Field-effect transistor#FET operation|enhancement-mode]] [[MOSFET]]s used for low-power switching applications. <ref name=vishay>
{{cite web
{{cite web
| title = 2N7000/2N7002, VQ1000J/P, BS170
| title = 2N7000/2N7002, VQ1000J/P, BS170
| url = http://www.vishay.com/docs/70226/70226.pdf
| url = http://www.vishay.com/docs/70226/70226.pdf
| work = Vishay Siliconix datasheet
| work = [[Siliconix|Vishay Siliconix]] datasheet
| accessdate = 28 March 2011
| accessdate = 28 March 2011
}}</ref>
}}</ref>
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| page = 237
| page = 237
| url = https://books.google.com/books?id=gtC3JYnYgdAC&pg=PA237
| url = https://books.google.com/books?id=gtC3JYnYgdAC&pg=PA237
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}}</ref>
The BS250P is "a good p-channel analog of the 2N7000."<ref>
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{{cite book
⚫
| title = PIC microcontrollers
⚫
|author1=Lucio Di Jasio |author2=Tim Wilmshurst |author3=Dogan Ibrahim | publisher = Newnes
⚫
| year = 2007
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| isbn = 0-7506-8615-4
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| page = 520
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| url = https://books.google.com/books?id=s8DBXs-jIRQC&pg=PA520
}}</ref>
}}</ref>


Packaged in a [[TO-92]] enclosure, both the 2N7000 and BS170 are 60 [[Volt|V]] devices. The 2N7000 can switch 200 [[Ampere|mA]]. The BS170 can switch 500 mA, with a maximum on-resistance of 5 [[Ohm|&Omega;]] at 10 V Vgs.


Packaged in a [[TO-92]] enclosure, the 2N7000 is rated to withstand 60 [[volt]]s and can switch 200 [[Ampere|millamps]].
The '''2N7002''' is another different part with different resistance, current rating and package. The 2N7002 is in a TO-236 package, also known as "small outline transistor" SOT-23 [[Surface-mount technology|surface-mount]], which is the most commonly used three-lead surface-mount package.<ref>

{{cite book
| title = Surface mount technology: principles and practice
| edition = 2nd
| author = Ray P. Prasad
| publisher = Springer
| year = 1997
| isbn = 0-412-12921-3
| page = 112
| url = https://books.google.com/books?id=IcxDPA2U6esC&pg=PA112
}}</ref>


==Applications==
==Applications==
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| last = Lancaster
| last = Lancaster
| first = Don
| first = Don
| authorlink = Don Lancaster
| author-link = Don Lancaster
|date=February 1986
|date=February 1986
| title = Hardware hacker
| title = Hardware hacker
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| publisher = Richard Ross
| publisher = Richard Ross
| issn = 0748-9889
| issn = 0748-9889
| url = https://books.google.com/?id=T3VVAAAAYAAJ&q=fetlington+%22ideal+hacker+parts%22+2N7000&dq=fetlington+%22ideal+hacker+parts%22+2N7000
| url = https://books.google.com/books?id=T3VVAAAAYAAJ&q=fetlington+%22ideal+hacker+parts%22+2N7000
}}</ref> The word "FETlington" is a reference to the [[Darlington transistor|Darlington-transistor]]-like saturation characteristic.
}}</ref> The word "FETlington" is a reference to the [[Darlington transistor|Darlington-transistor]]-like saturation characteristic.


A typical use of these transistors is as a [[MOSFET#Single-type MOSFET switch|switch]] for moderate voltages and currents, including as drivers for small lamps, motors, and relays.<ref name=vishay/> In switching circuits, these FETs can be used much like [[bipolar junction transistor]]s, but have some advantages:
A typical use of these transistors is as a [[MOSFET#Single-type|switch]] for moderate voltages and currents, including as drivers for small lamps, motors, and relays.<ref name=vishay/> In switching circuits, these FETs can be used much like [[bipolar junction transistor]]s, but have some advantages:
* low threshold voltage means no gate bias required
* high input impedance of the insulated gate means almost no gate current is required
* high input impedance of the insulated gate means almost no gate current is required
* consequently no current-limiting resistor is required in the gate input
* consequently no current-limiting resistor is required in the gate input
* MOSFETs, unlike PN junction devices (such as LEDs) can be paralleled because resistance increases with temperature
* MOSFETs, unlike PN junction devices (such as LEDs) can be paralleled because resistance increases with temperature, although the quality of this load balance is largely dependent on the internal chemistry of each individual MOSFET in the circuit


The main disadvantages of these FETs over bipolar transistors in switching are the following:
The main disadvantages of these FETs over bipolar transistors in switching are the following:
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* circuits with external gate exposure require a protection gate resistor or other static discharge protection
* circuits with external gate exposure require a protection gate resistor or other static discharge protection
* Non-zero ohmic response when driven to saturation, as compared to a constant junction voltage drop in a bipolar junction transistor
* Non-zero ohmic response when driven to saturation, as compared to a constant junction voltage drop in a bipolar junction transistor

* [[MOSFET]]s (but not the fairly useless for power handling [[JFET]]s) have an [[Power_MOSFET#Body_diode|intrinsic diode]] which means they only switch when polarized one way, while the free-wheeling diode conducts the other way, similar to how [[electrolytic capacitors]] must follow polarization rules
==Other devices==
Many other n-channel MOSFETs exist. Some part number are 2N7002, BS170, 2N7002, VQ1000J, and VQ1000P. They may have different pin outs, packages, and electrical properties. The BS250P is "a good p-channel analog of the 2N7000."<ref>
⚫
{{cite book
⚫
| title = PIC microcontrollers
⚫
|author1=Lucio Di Jasio |author2=Tim Wilmshurst |author3=Dogan Ibrahim | publisher = Newnes
⚫
| year = 2007
⚫
| isbn = 978-0-7506-8615-0
⚫
| page = 520
⚫
| url = https://books.google.com/books?id=s8DBXs-jIRQC&pg=PA520
⚫
}}</ref>


==References==
==References==
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* [http://hades.mech.northwestern.edu/index.php/Driving_using_a_single_MOSFET Driving a single MOSFET] Detailed description of usage of a similar MOSFET
* [http://hades.mech.northwestern.edu/index.php/Driving_using_a_single_MOSFET Driving a single MOSFET] Detailed description of usage of a similar MOSFET
;Datasheets
;Datasheets
* [http://www.onsemi.com/pub/Collateral/2N7000-D.PDF 2N7000, 200mA, TO-92 case] {{Webarchive|url=https://web.archive.org/web/20070927025745/http://www.onsemi.com/pub/Collateral/2N7000-D.PDF |date=27 September 2007 }}, On Semiconductor
* [http://www.nxp.com/documents/data_sheet/2N7002.pdf 2N7002, 300mA, SOT-23 case], NXP Semiconductors
* [http://www.onsemi.com/pub/Collateral/BS170-D.PDF BS170, 500mA, TO-92 case] {{Webarchive|url=https://web.archive.org/web/20201024204839/https://www.onsemi.com/pub/Collateral/BS170-D.PDF |date=24 October 2020 }}, On Semiconductor
* [http://www.nxp.com/documents/data_sheet/NX7002AK.pdf NX7002AK, 300mA, SOT-23 case], NXP Semiconductors
* [http://www.onsemi.com/pub/Collateral/2N7000-D.PDF 2N7000, 200mA, TO-92 case], On Semiconductor
* [https://web.archive.org/web/20141222121754/http://www.nxp.com/documents/data_sheet/2N7002.pdf 2N7002, 300mA, SOT-23 case], NXP Semiconductors
* [http://www.onsemi.com/pub/Collateral/BS170-D.PDF BS170, 500mA, TO-92 case], On Semiconductor
* [https://web.archive.org/web/20130722064056/http://www.nxp.com/documents/data_sheet/NX7002AK.pdf NX7002AK, 300mA, SOT-23 case], NXP Semiconductors


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{{Use dmy dates|date=March 2011}}


{{DEFAULTSORT:2n7000}}
{{DEFAULTSORT:2n7000}}

Latest revision as of 18:50, 10 October 2024

2N7000 / 2N7002
TypeMOSFET Transistor
Working principle‍N-channel
Pin configuration G = Gate, D = Drain, S = Source. The symbol doesn't always show the internal diode formed between the substrate and the source/drain/channel.
Electronic symbol
The 2N7000 is housed in a TO92 package, with lead 1 connected as the source, lead 2 as the gate, and lead 3 as the drain. The BS170 has the source and drain leads interchanged.
The 2N7002 variant is packaged in a TO-236 surface-mount package.

The 2N7000 is an N-channel, enhancement-mode MOSFETs used for low-power switching applications. [1]

The 2N7000 is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use.[2]


Packaged in a TO-92 enclosure, the 2N7000 is rated to withstand 60 volts and can switch 200 millamps.


Applications

[edit]

The 2N7000 has been referred to as a "FETlington" and as an "absolutely ideal hacker part."[3] The word "FETlington" is a reference to the Darlington-transistor-like saturation characteristic.

A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays.[1] In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages:

  • high input impedance of the insulated gate means almost no gate current is required
  • consequently no current-limiting resistor is required in the gate input
  • MOSFETs, unlike PN junction devices (such as LEDs) can be paralleled because resistance increases with temperature, although the quality of this load balance is largely dependent on the internal chemistry of each individual MOSFET in the circuit

The main disadvantages of these FETs over bipolar transistors in switching are the following:

  • susceptibility to cumulative damage from static discharge prior to installation
  • circuits with external gate exposure require a protection gate resistor or other static discharge protection
  • Non-zero ohmic response when driven to saturation, as compared to a constant junction voltage drop in a bipolar junction transistor

Other devices

[edit]

Many other n-channel MOSFETs exist. Some part number are 2N7002, BS170, 2N7002, VQ1000J, and VQ1000P. They may have different pin outs, packages, and electrical properties. The BS250P is "a good p-channel analog of the 2N7000."[4]

References

[edit]
  1. ^ a b "2N7000/2N7002, VQ1000J/P, BS170" (PDF). Vishay Siliconix datasheet. Retrieved 28 March 2011.
  2. ^ H. Ward Silver (2005). Two-way radios & scanners for dummies. p. 237. ISBN 0-7645-9582-2.
  3. ^ Lancaster, Don (February 1986). "Hardware hacker". Modern Electronics. 3 (2). Richard Ross: 115. ISSN 0748-9889.
  4. ^ Lucio Di Jasio; Tim Wilmshurst; Dogan Ibrahim (2007). PIC microcontrollers. Newnes. p. 520. ISBN 978-0-7506-8615-0.
[edit]
Datasheets
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