Electromigration during accelerated testing can induce large scale plastic deformation in Al interconnect lines as recently revealed by the white beam scanning X-ray microdiffraction. In the present paper, we provide a first quantitative analysis of the dislocation structure generated in individual micron-sized Al grains during an in-situ electromigration experiment. Laue reflections from individual interconnect grains show pronounced streaking after electric current flow. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of unpaired randomly distributed dislocations as well as geometrically necessary dislocation boundaries. Approximately half of all unpaired dislocations are grouped within the walls. The misorientation created by each boundary and density of unpaired individual dislocations is determined.

The deformation behavior of BCC metals is being investigated by x-ray microdiffraction measurements (mu XRD) for the purpose of characterizing the dislocation structure that results from uniaxial compression experiments. The high brilliance synchrotron source at the Advanced Light Source (Lawrence Berkeley National Lab) and the micron resolution of the focusing optics allow for the mapping of Laue diffraction patterns across a sample. These measurements are then analyzed in order to map the distribution of residual stresses in the crystal. An important findingis the observation of Laue spot "streaking," which indicates localized rotations in the lattice.These may represent an accumulation of same-sign dislocations. Theoretical modeling of the diffraction response for various slip systems is presented, and compared to experimental data. Preliminary results include orientation maps from a highly strained Ta bicrystal and a less highly strained Mo single crystal. The orientation maps of the bicrystal indicate a cell-like structure of dense dislocation walls. This deformation structure is consistent with previous OIM studies of the same crystal. The results suggest that mu XRD may be a particularly useful tool for microscale studies of deformation patterns in a multi-scale investigation of the mechanisms of deformation that ranges from macroscopic deformation tests to high resolution TEM studies of dislocation structures.

The spatial distribution of strain, dislocations, and crystallographic orientation in uncoalesced and coalesced GaN layers grown on striped Si or SiC substrates was studied by polychromatic X-ray microdiffraction and high resolution monochromatic X-ray diffraction. Tilt boundaries formed at the column/wing interface depending on the growth conditions and geometry of the striped substrate. The measurements revealed that the free-hanging wings are tilted upward at room temperature. A misorientation between the GaN(0001) and the Si(111) or SiC(0001) surface normal is observed. Distinct structural properties of the pendeo and cantilever epitaxially grown samples are discussed.