15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 1012 Write Endurance and Integrated Margin-Expansion Schemes. Abstract: STT-MRAM has been ...
Feb 20, 2024 · We demonstrate an embedded MRAM with a fast write. (20ns) and a high endurance (>1012 cycles). The MRAM macro features a small bit cell size of ...
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 10 12 Write Endurance and Integrated Margin-Expansion Schemes. February 2024. DOI:10.1109 ...
Missing: 1012 | Show results with:1012
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 1012 Write Endurance and Integrated Margin-Expansion Schemes. Ku-Feng Lin 1. ,. Hiroki Noguchi 1.
STT-MRAM has been demonstrated as a viable embedded non-volatile memory (NVM) with 20-year data retention at 150°C, a high write endurance (>1M cycles), and the ...
“15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 10<sup>12</sup> Write Endurance and Integrated Margin-Expansion Schemes” is a paper by Ku-Feng Lin ...
Missing: 1012 | Show results with:1012
STT-MRAM has been demonstrated as a viable embedded non-volatile memory (NVM) with 20-year data retention at 150°C, a high write endurance (>1M cycles), ...
5 days ago · Paper 15.9 A 16nm 16Mb Embedded STT-MRAM with 20ns Write Time, a 1012 Write Endurance and Integrated Margin-Expansion Schemes, from TSMC.
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 10 12 Write Endurance and Integrated Margin-Expansion Schemes. Conference Paper. Feb 2024.
May 29, 2024 · In Paper 15.9, TSMC describes a 16nm 16Mb embedded STT-MRAM with a 20ns write time, a 1012-cycle write endurance and an integrated margin ...