6T CMOS SRAMs reliability monitoring through stability measurements. Abstract: Technology scaling trends led to an aggressive increase of SRAM cell sensitivity ...
scholar.google.com › citations
This work proposes a new metric using regular read/write operations based on the estimation of the maximum word-line voltage drop during write operations. The ...
This work proposes a new metric using regular read/write operations based on the estimation of the maximum word-line voltage drop during write operations. The ...
This chapter reviews the most extended memory cell stability metrics and evaluates the feasibility of tracking SRAM cell reliability evolution.
6T CMOS SRAMs reliability monitoring through stability measurements ... Technology scaling trends led to an aggressive increase of SRAM cell sensitivity to ...
Abstract―This paper presents an in-depth study on the design and performance analysis of 6T SRAM cells using CMOS technology at different technology nodes: ...
The main principle is to measure the specific cell's currents with variant supply levels . The measured currents are used to estimate the read stability and the ...
Missing: monitoring | Show results with:monitoring
The main purpose of this paper is to simulate 6T SRAM to evaluate the performance at different CMOS technology nodes (180 nm, 90 nm, 65 nm, 45 nm)
Missing: monitoring | Show results with:monitoring
Read Stability is the ability to prevent the SRAM cell to flip the stored value while the stored value is being read [14]. Figure 4 shows the schematics for the ...
Missing: monitoring | Show results with:monitoring
This paper presents a simulation methodology using a deep neural network (DNN) to predict the performance of SRAM cells, taking into account the impacts of ...