Three DRAM technologies, which are a leakage- and soft-error-free planar-capacitor SOI cell, a data-line shielded twin (2-T) cell array, and an offset-free ...
Three DRAM technologies, which are a leakage- and soft-error-free planar-capacitor SOI cell, a data-line shielded twin (2-T) cell array, and an offset-free ...
In this paper, a leakage-and soft-error-free SOI cell and array, a new data-line-shielded twin cell (2-T cell), and an offset-free dynamic-VT sense amplifier ...
A data-line shielded twin (2-T) cell array, and an offset-free dynamic-VT sense amplifier suitable for low-voltage mid-point sensing, are presented and ...
A 0.5-V FD-SOI Twin-Cell DRAM with Offset-Free Dynamic-VT Sense Amplifiers · R. Takemura, K. Itoh, T. Sekiguchi · Published in ISLPED'06 Proceedings of the… 4 ...
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CLR-DRAM allows dy- namic reconfiguration of any DRAM row to switch between two operating modes: 1) max-capacity mode, where every DRAM cell operates ...
CLR-DRAM: A Low-Cost DRAM Architecture Enabling Dynamic Capacity-Latency Trade-Off · A 0.5-V FD-SOI twin-cell DRAM with offset-free dynamic-V-T sense amplifiers.
Apr 25, 2024 · Low-Vt small-offset gated preamplifier for sub-1V gigabit DRAM arrays. ... A 0.5-V FD-SOI twin-cell DRAM with offset-free dynamic-VT sense ...
A 0.5-V FD-SOI Twin-Cell DRAM with Offset-Free Dynamic-VT Sense Amplifiers · R. TakemuraK. ItohT. Sekiguchi. Engineering, Materials Science. ISLPED'06 ...
Sekiguchi, “A 0.5-V FD-SOI twin-cell DRAM with offset-free dynamic-VT sense amplifiers,” ISLPED Dig. Tech. Papers, pp. 123–126, Oct. 2006. Google Scholar. C. M. ...