×
Abstract: A 4GS/s sampling system achieved 8.45-ENOB linearity with 5.7fJ/conversion energy efficiency at 1V power supply and its gain can be adjusted in a ...
Oct 22, 2024 · A 4GS/s sampling system achieved 8.45-ENOB linearity with 5.7fJ/conversion energy efficiency at 1V power supply and its gain can be adjusted ...
Abstract: A 4GS/s sampling system achieved 8.45-ENOB linearity with 5.7fJ/conversion energy efficiency at 1V power supply and its gain can be adjusted in a ...
A 4GS/s sampling system achieved 8.45-ENOB linearity with 5.7fJ/conversion energy efficiency at 1V power supply and its gain can be adjusted in a digital ...
The sampling system tracks and settles in 1/4UI (62.5ps). Realized in a 45nm SOI CMOS the active area of the sampler is only 0.2×0.2mm2.
A 4GS/s, 8.45 ENOB and 5.7fJ/conversion, digital assisted, sampling system in 45nm CMOS SOI. M. A.T. Sanduleanu, S. Reynolds, J. O. Plouchart. Electrical ...
Publications ; A 4GS/s, 8.45 ENOB and 5.7fJ/conversion, digital assisted, sampling system in 45nm CMOS SOI. Mihai Sanduleanu; Scott Reynolds · 2011 ; 3D Si-level ...
A 4GS/s sampling system achieved 8.45-ENOB linearity with 5.7fJ/conversion energy efficiency at 1V power supply and its gain can be adjusted in a digital ...
A 4GS/s, 8.45 ENOB and 5.7fJ/conversion, digital assisted, sampling system in 45nm CMOS SOI. CICC 2011: 1-4; 2010. [j12]. view. electronic edition via DOI ...
A 4GS/s, 8.45 ENOB and 5.7fJ/conversion, digital assisted, sampling system in 45nm CMOS SOI ... A 4GS/s sampling system achieved 8.45-ENOB linearity with ...