A 60 GHz, 50 mW, 3dB Noise Figure Receiver Frontend Using UMC 40 nm CMOS technology. In this work the low-IF receiver for 60 GHz wireless system is presented using 40nm CMOS technology. The individual blocks of receiver front-end includes 3-stage low noise amplifier (LNA), mixer, low pass filter (LPF).
Abstract: In this work the low-IF receiver for 60 GHz wireless system is presented using 40nm CMOS technology. The individual blocks of receiver front-end ...
Abstract—In this work the low-IF receiver for 60 GHz wireless system is presented using 40nm CMOS technology. The individual blocks of receiver front-end ...
In this paper, the Low Noise Amplifier is realized using 180 nm CMOS technology for 2–5 GHz using cascade-cascode topology. The circuit used the cascode ...
In this work the low-IF receiver for 60 GHz wireless system is presented using 40nm CMOS technology. The individual blocks of receiver front-end includes ...
The receiver front-end is implemented in a 1P6M 65 nm CMOS process and occupies a total chip area of 2.17 mm2. It exhibits a conversion gain of 36.5 dB, an IIP3 ...
A 60 GHz, 50 mW, 3dB Noise Figure Receiver Frontend Using UMC 40 nm CMOS technology. PK Yadav, P Kumar, A Verma, S Ambulker, PK Misra. 2020 IEEE International ...
A 60 GHz, 50 mW, 3dB Noise Figure Receiver Frontend Using UMC 40 nm CMOS technology. Proceedings - 2020 6th IEEE International Symposium on Smart Electronic ...
Design of a Dual Band Low Noise Amplifier at 1.1GHz and 2.4GHz ... A 60 GHz, 50 mW, 3dB Noise Figure Receiver Frontend Using UMC 40 nm CMOS technology.
A 60 GHz, 50 mW, 3dB Noise Figure Receiver Frontend Using UMC 40 nm CMOS technology pp. 227-231. Construction of Telemetric Ultrasound Measurement System ...