Intel's 10+ technology is shown to be reliable and is now fully certified for high-volume manufacturing. Gate oxide TDDB, hot carrier, and bias-temperature instability show substantial margin to lifetime targets. Interconnect and ILD integrity, and MIM capacitor similarly meet technology targets with margin.
We provide a comprehensive overview of the reliability characteristics of Intel's 10+ logic technology. This is a 10 nm technology featuring the third ...
This work provides a comprehensive overview of the reliability characteristics of Intel's 10+ logic technology, a 10 nm technology featuring the third ...
Reliable estimation of logic SEU cross section is becoming increasingly important for predicting overall soft error rate. As technology scales and SET pulse ...
Apr 28, 2020 · We provide a comprehensive overview of the reliability characteristics of Intel’s 10+ logic technology. This is a 10 nm technology ...
Silicon Reliability Characterization of Intel’s Foveros 3D Integration Technology for Logic-on-Logic Die Stacking · Author Picture Chetan Prasad.
A 10nm logic technology using 3rdYgeneration FinFET transistors with SelfYAligned Quad Patterning (SAQP) for critical patterning layers, and cobalt local ...
It is reported that Intel's 10nm technology achieved scaling benefit over its preceding 14nm generation at matched or better transistor reliability.
Reliability of dual-damascene local interconnects featuring cobalt on 10 nm logic technology ... A reliability overview of Intel's 10+ logic technology. R Grover, ...
Before releasing a product, Intel tests, measures, and models many reliability mechanisms to ensure that the processors meet reliability expectations, known as ...
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