This article describes a polar design soft error upset recovery SRAM memory cell (SUR-16T) that effectively recovers lost data due to a high-energy particle strike. SUR-16T has superior write stability, lower hold power dissipation, and shorter write access time at PVT variations compared to the mentioned memory cells.
Nov 3, 2023 · This article describes a polar design soft error upset recovery. SRAM memory cell (SUR-16T) that effectively recovers lost data due to a high- ...
This article describes a polar design soft error upset recovery. SRAM memory cell (SUR-16T) that effectively recovers lost data due to a high-energy particle ...
Nov 24, 2023 · PDF | On Oct 31, 2023, Pavan Kumar Mukku and others published A Soft Error Upset Recovery SRAM Cell for Aerospace and Military Applications |
2 Citations · A Low-Energy Critical Charge-Enhanced SRAM for Aerospace Applications · A robust radiation resistant SRAM cell for space and military applications.
This article describes a polar design soft error upset recovery SRAM memory cell (SUR-16T) that effectively recovers lost data due to a high-energy particle ...
This makes the SRAM cell more sensitive to radiation particles and causes soft errors like single and double node upsets [10]. The soft errors are the major ...
In this paper, a 10T Soft-Error-Immune SRAM (SIS10T) is proposed for space applications. To gauge the relative performance of SIS10T, it is compared with ...
Jun 25, 2023 · The SRAM cells working in the aerospace environments require high radiation resistance to cope with the complex impact of the environment.
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This paper presents a new radiation-hardened SRAM cell (NRHC-14T); It has a fast read and write speed, will be strong stability; It reduces the number of ...