High Al-composition AlGaN materials, by virtue of their ultra-wide band gap, are promising candidates for realizing high power density mm-wave transistors.
All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs. Hao Xue1 ... Conclusion: We have demonstrated the first 250 nm gate length high Al-composition AlGaN ...
Figure 6. Small signal RF characteristics of Al0.70Ga0.30N MESFET showing fT/fMAX = 8.8/24 GHz - "All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs"
All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs. June 2018. DOI:10.1109/DRC.2018.8442167. Conference: 2018 76th Device Research Conference (DRC).
[PDF] All MOCVD grown 250 nm gate length Al<sub>0.70</sub ... - OA.mg
oa.mg › work › drc.2018.8442167
High Al-composition AlGaN materials, by virtue of their ultra-wide band gap, are promising candidates for realizing high power density mm-wave transistors.
Missing: 70Ga0. 30N
Bibliographic details on All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs.
Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan , Wu Lu: All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs. DRC 2018: 1-2. [+][–]. Coauthor network.
The device with a gate length of 250 nm shows a drain current density (IDSS) of 370 mA/mm when the gate is shorted to source, unity current gain cutoff ...
Abstract: We report RF small signal analysis of ultra-wide bandgap AlGaN channel MESFETs with Al composition of 70%. Ohmic contacts are achieved using a ...
Xue, All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs, с. 1; Xue, Al0 ... Razzak, Design of compositionally graded contact layers for MOCVD grown high Al- ...