This paper is oriented to open-gate defects hard-to-detect that are unique to FinFET based SRAM memory cells. The open-gate defect affects only one of the ...
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This paper is oriented to open-gate defects hard-to-detect that are unique to. FinFET based SRAM memory cells. The open-gate defect affects only one of the ...
Analysis and detection of hard-to-detect full open defects in FinFET based SRAM cells ... analysis of SRAM cell capability beyond 10-nm FinFET technology.
Analysis and detection of hard-to-detect full open defects in FinFET based SRAM cells, -. dc.type, conferenceObject, -. dc.date.updated, 2021-09-24T20:49:11Z ...
Detection of these faults, such as random read outputs and out-of-spec parametric deviations, is essential when testing FinFET SRAMs. Undetected HTD faults.
Oct 22, 2024 · Full-text available. Analysis and detection of hard-to-detect full open defects in FinFET based SRAM cells. March 2020. Javier Mesalles · Hector ...
Thus, it is required to study the behavior of defects in FinFET-based SRAM memories and develop new test strategies for those not covered by conventional test ...
This paper study open-gate defects affecting only one of the parallel fins in the driver transistors of the memory cell of FinFET-based SRAM memories, ...
Undetected HTD faults result in test escapes, which lead to early in-field failures. This paper presents a detailed analysis of HTD faults in FinFET SRAMs by ...
This article presents a detailed analysis of HTD faults in FinFET SRAMs by exploring their sensitization and discussing solutions to improve HTD fault coverage ...