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In this paper, we calculate the luminescence of the dilute quaternary InAs 1-x-y N x Sb y semiconductor using a microscopic approach.
In this paper, we calculate the luminescence of the dilute quaternary InAs1-x-yNxSby semiconductor using a microscopic approach.
In this paper, we calculate the luminescence of the dilute quaternary InAs1-x-yNxSby semiconductor using a microscopic approach. The theory starts with the ...
In this paper, we calculate the luminescence of the dilute quaternary InAs1-x-yNxSby semiconductor using a microscopic approach. The theory starts with the band ...
Dec 19, 2015 · In this paper, we calculate the luminescence of the dilute quaternary InAs1−x−yNxSby semiconductor using a microscopic approach.
Chijioke I. Oriaku, Mauro F. Pereira : Band anticrossing and luminescence emission in dilute InAs1-x-yNxSby quaternary alloys. ICTON 2015: 1-3; 2014.
May 3, 2017 · InAs1−x−yNxSby alloy, the band anticrossing model is applied on the CB and the VB since the reduction of the bandgap energy is due to the ...
In this paper, we calculate the luminescence of the dilute quaternary InAs1-x-yNxSby semiconductor using a microscopic approach. The theory starts with the band ...
Band anticrossing and luminescence emission in dilute InAs1-x-yNxSby quaternary alloys. ICTON 2015: 1-3. [c4]. view. electronic edition via DOI · unpaywalled ...
Oct 28, 2005 · Band anticrossing and luminescence emission in dilute InAs1−x−yNxSby quaternary alloys · C. OriakuMauro F. Pereira. Physics. 2015 17th ...