Abstract: Two opto-electronics integrated circuits (OEIC) are presented. CMOS transimpedance amplifier (TIA) structures based on the common-gate topology, ...
Simulations were performed using BSIM3V3, modified BSIM3v3, and EKV models for high-frequency applications. Experimental and simulation results were performed ...
This paper presents an integrated optical receiver which consists of an integrated photodetector, and a transimpedance circuit. A series inductive peaking is ...
Experimental results show a 10-dB voltage gain at 1 GHz and unity-gain frequencies of 3.6 GHz. The noise figure, measured at 1 GHz, is 3.4 dB. The preamplifier ...
The transconductor was fabricated using 0.5 μm BiCMOS mixed-signal process. A minimum THD value of 0.2% was obtained with a 100 μs transconductance up to a ...
Photonic BiCMOS is a novel technology for fabricating electronic-photonic integrated circuits. Broadband silicon photonics devices such as germanium ...
All electronic and photonic components needed to receive the optical clock signal, the electronic radio frequency (RF) signal, and the in-phase quadrature ...
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The BiCMOS technology finds wide applications when driving heavy loads such as those associated with off-chip loads or long runs within the chip.
0.18-micron SiGe BiCMOS technology performs at higher speeds and lower power than standard CMOS. It is less expensive than gallium arsenide (GaAs) ...
Abstract—A dual-channel 10 Gb/s per channel single-chip opto- electronic transceiver has been demonstrated in a 0.13- m CMOS. SOI technology.