Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate ...
Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate ...
Breakdown investigation in GaN-based MIS-HEMT devices ; dc.contributor.author, Meneghini, Matteo ; dc.contributor.author, Verzellesi, Giovanni ; dc.contributor.
This article summarizes several breakdown mechanisms of GaN devices, including electric field concentration, buffer leakage current, gate leakage current, and ...
Apr 22, 2024 · This Letter reports the investigations of E-mode p-GaN-gate AlGaN/GaN HEMTs for harsh environment operation from device and material ...
GaN-based High Electron Mobility Transistors (HEMTs) have several advantages, such as inherent two-dimensional electron gas (2DEG), a large breakdown electric ...
AlGaN/GaN high-electron-mobility transistors (HEMTs) are promising for power switching applications due to the wide band gap, large breakdown electric field, ...
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The breakdown characteristics are very important for GaN high-electron-mobility transistors (HEMTs), which affect the application voltage, power density, ...
Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate ...
The breakdown mechanism of high-voltage GaN-HEMT was analysed using the experimental I–V characteristics and two-dimensional device simulation results.