This work presents a comparison of resilience between a 32nm Bulk and a 28nm Fully-Depleted Silicon On Insulator (FDSOI) transistor to heavy ion impacts on ...
Abstract—This work presents a comparison of resilience between a. 32nm Bulk and a 28nm Fully-Depleted Silicon On Insulator (FDSOI) transistor to heavy ion ...
A comparison of resilience between a 32nm Bulk and a 28nm Fully-Depleted Silicon On Insulator (F DSOI) transistor to heavy ion impacts on the Drain region ...
PDF | This work presents a comparison of resilience between a 32nm Bulk and a 28nm Fully-Depleted Silicon On Insulator (FDSOI) transistor to heavy ion.
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This work presents a comparison of resilience between a 32nm Bulk and a 28nm Fully-Depleted Silicon On Insulator (FDSOI) transistor to heavy ion impacts on ...
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An analysis of the 28nm FDSOI resilience to heavy-ion impacts is undertaken at different temperature and buried oxide (BOX) thickness using TCAD tools, ...