Therefore, the purpose of this study is to identify traps in GaN-on-Si power MISHEMTs at meaningful operating conditions, i.e. at high voltage operation, and to ...

Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiN x passivation · Engineering, Physics · 2017.

Identification and characterization of a single, deep trap causing large increases in the on-resistance of GaN-on-Si power ...

Bibliographic details on Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs.

These deep levels can potentially act as charge trapping centers limiting device performance and long term reliability. It is therefore imperative to monitor ...

Sep 23, 2024 · This experimental study investigates the traps dynamics and threshold voltage (VTH) shift mechanism under negative bias temperature stress ...

Oct 31, 2023 · In this article, the locations and energy levels of traps in GaN HEMTs are summarized. Moreover, the characterization techniques for bulk traps and interface ...

Abstract. The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate.

Apr 26, 2018 · This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of ...

This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based ...