Feb 22, 2024 · In this paper, we investigated an experimental analysis of the degradation caused by low dose rate irradiation in GaN-based high-electron-mobility transistors ...
(PDF) Degradation Mechanisms of Gate leakage in GaN-based HEMTs ...
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Sep 24, 2024 · In this paper, we investigated an experimental analysis of the degradation caused by low dose rate irradiation in GaN-based ...
In this paper, we investigated an experimental analysis of the degradation caused by low dose rate irradiation in GaN-based high-electron-mobility ...
Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation ... Authors: Xiaolong Li; Xin Wang; Mohan Liu; Kunfeng Zhu; Guohua Shui ...
Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation. In this paper, we investigated an experimental analysis of the ...
Study on irradiation effect and damage mechanism in cascode ...
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The degradation of electrical properties in GaN HEMT devices post-electron irradiation may result from the total dose effect in the enhanced Si MOSFETs, with ...
8 to illustrate the mechanisms responsible for the TAT process. ... Degradation Mechanisms of Gate leakage in GaN-based HEMTs at Low Dose Rate Irradiation.
Feb 27, 2023 · In this work, we investigated the device property alteration and its mechanisms, which were caused by the proton irradiation in GaN-based MIS- ...
Oct 11, 2024 · Oh et al. reported that the gate leakage current decreased and drain−source current (IDS) increased when the E-beam radiation power increased, ...
May 1, 2023 · The onset of ion-induced leakage occurs above critical power dissipation within the epitaxial regions at high linear energy transfer rates and ...